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首页> 外文会议>Proceedings vol.2005-08; International Symposium on Microelectronics Technology and Devices(SBMICRO 2005); 200509; >IMPLEMENTATION OF TUNABLE RESISTORS USING GRADED-CHANNEL SOI MOSFETS OPERATING IN CRYOGENIC ENVIRONMENTS
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IMPLEMENTATION OF TUNABLE RESISTORS USING GRADED-CHANNEL SOI MOSFETS OPERATING IN CRYOGENIC ENVIRONMENTS

机译：在低温环境下使用梯度沟道SOI MOSFET实现可调谐电阻

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摘要

The performance evaluation of conventional and graded-channel SOI MOSFETs operating as tunable resistors is performed from room temperature down to 90 K. The on-resistance, total harmonic distortion and third order harmonic distortion have been adopted as figures of merit. It is shown that the on-resistance reduces with the temperature lowering and is smaller in any GC SOI than in conventional SOI due to the effective channel length reduction. The total harmonic distortion is weakly temperature dependent and decreases in GC transistors, due to reduction of the effective voltage amplitude that is applied on the conventionally doped part of the channel. On the other hand, the third order harmonic distortion is strongly temperature influenced, increasing 15 dB at 90 K with respect to room temperature operation. Conventional and GC SOI have similar third order harmonic distortion in all studied temperatures.
机译：在室温至低至90 K的温度范围内进行常规和渐变沟道SOI MOSFET的性能评估。导通电阻，总谐波失真和三阶谐波失真已作为品质因数。结果表明，导通电阻随温度降低而降低，并且由于有效的沟道长度减小，在任何GC SOI中导通电阻都比常规SOI小。总谐波失真与温度的关系很弱，并且在GC晶体管中会降低，这是由于施加在通道的常规掺杂部分上的有效电压幅度降低了。另一方面，三阶谐波失真受温度的影响很大，相对于室温操作，在90 K时增加15 dB。常规和GC SOI在所有研究温度下均具有相似的三阶谐波失真。

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