Optical properties in InGaAs quantum dots on SiO_2-patterned vicinal (001) GaAs substrate

机译：SiO_2图案邻域（001）GaAs衬底上InGaAs量子点的光学性质

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We studied the energy states in In_(0.8)Ga_(0.2)As SAQDs (self-assembled quantum dots) which depended on W(001) and the misorientation angle of the substrate. Starting materials used in this study were SiO_2-patterend exact and 5 degree -off (001) GaAs substrates. In_(0.8)Ga_(0.2)As SAQDs had only ground state emissions for SiO_2-patterned exact (001) GaAs substrate, whereas those had ground and excited state emissions for SiO_2-patterned 5 degree-off (001) GaAs substrate. These results suggest that discrete nature of the density of states in SAQDs was improved by using SiO_2-patterned vicinal (001) GaAs substrate with higher misorientation angle of substrate.

机译：我们研究了In_（0.8）Ga_（0.2）As SAQDs（自组装量子点）中的能态，该SAQDs取决于W（001）和衬底的取向差角。在这项研究中使用的起始材料是精确的SiO_2图案和5度（001）GaAs衬底。 In_（0.8）Ga_（0.2）As SAQD对于SiO_2图案的精确（001）GaAs衬底仅具有基态发射，而对于SiO_2图案的5度偏移（001）GaAs衬底仅具有基态和激发态发射。这些结果表明，通过使用具有较高衬底取向错误角的SiO_2图案邻域（001）GaAs衬底，可以改善SAQD中状态密度的离散性质。

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来源
《Quantum dots and nanostructures: Synthesis, characterization, and modeling VII》|2010年|P.761012.1-761012.8|共8页
会议地点 San Francisco CA(US)
作者
Hyo Jin Kim; Sou Young Yoo; Hang ju Ko; Myung Soo Han; Doo Gun Kim; Swook Han; Seon hoon Kim; Hyun Chul Ki;
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作者单位

Photonics Device Team, Korea Photonics Technology Institute, WolChul-dong, Buk-go, Gwangju 500-779, Korea;

rnPhotonics Device Team, Korea Photonics Technology Institute, WolChul-dong, Buk-go, Gwangju 500-779, Korea;

rnPhotonics Device Team, Korea Photonics Technology Institute, WolChul-dong, Buk-go, Gwangju 500-779, Korea;

rnPhotonics Device Team, Korea Photonics Technology Institute, WolChul-dong, Buk-go, Gwangju 500-779, Korea;

rnPhotonics Device Team, Korea Photonics Technology Institute, WolChul-dong, Buk-go, Gwangju 500-779, Korea;

rnPhotonics Device Team, Korea Photonics Technology Institute, WolChul-dong, Buk-go, Gwangju 500-779, Korea;

rnPhotonics Device Team, Korea Photonics Technology Institute, WolChul-dong, Buk-go, Gwangju 500-779, Korea;

rnPhotonics Device Team, Korea Photonics Techn;

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原文格式 PDF
正文语种 eng
中图分类材料;
关键词
quantum dot; vicinal substrate; self-assembled; misorientation angle; multi-atomic step;

机译：量子点邻近基质自组装方位角多原子步骤;

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专利

1. Formation of GaAs wire structures and position-controlled In_(0.8)Ga_(0.2)As quantum dots on SiO_2-patterned vicinal (001) GaAs substrates [J] . Hyo Jin Kim, Junichi Motohisa, Takashi Fukui Nanotechnology . 2004,第3期

机译：在SiO_2图案邻域（001）GaAs衬底上形成GaAs线结构和位置控制的In_（0.8）Ga_（0.2）As量子点
2. Carrier diffusion in InGaAs/GaAs quantum wells grown on vicinal GaAs(001) substrates [J] . Monte AFG, Soler MAG, da Silva SW, Physica, E. Low-dimensional systems & nanostructures . 2004,第3a4期

机译：在邻近GaAs（001）衬底上生长的InGaAs / GaAs量子阱中的载流子扩散
3. Reduction f indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs (001) substrates [J] . S.Martini, A.A.Quivy, A.Tabata Journal of Vacuum Science & Technology. B, Microelectronics Processing and Phenomena . 2000,第4期

机译：在邻近GaAs（001）衬底上通过分子束外延生长的InGaAs / GaAs量子阱中的铟偏析
4. Optical properties in InGaAs quantum dots on SiO_2-patterned vicinal(001) GaAs substrate [C] . Hyo Jin Kim, Sou Young Yoo, Hang ju Ko, SPIE conference on Quantum dots and nanostructures . 2010

机译：在SiO_2型图案化的邻近的邻近的邻近的邻近的Vicinal（001）GaAs衬底上的光学性质
5. Defect Creation in InGaAs/GaAs Multiple Quantum Wells: Correlation of Crystalline and Optical Properties with Epitaxial Growth Conditions. [D] . Karow, Matthias. 2014

机译：InGaAs / GaAs多量子阱中的缺陷产生：晶体和光学特性与外延生长条件的相关性。
6. Energy state of InGaAs quantum dots on SiO2-patterned vicinal substrate [O] . Hyo Jin Kim, Junichi Mothohisa, Takashi Fukui 2012

机译：SiO2图案邻域衬底上InGaAs量子点的能态
7. In-mole-fraction of InGaAs Insertion Layers Effects on the Structural and Optical Properties of GaSb Quantum Dots Grown on (001) GaAs Substrate [O] . Suwit Kiravittaya, Kamonchanok Khoklang, Supachok Thainoi, 1970

机译：InGaAs插入层的内部分数对（001）GaAs衬底生长的GASB量子点的结构和光学性质的影响
8. Optical Properties of InGaAsN/GaAs Quantum Well and Quantum Dot Structures for Longwavelength Emission. [R] . Volovik, B. V., Kovsh, A. R., Passenberg, W., 2000

机译：用于长波发射的InGaasN / Gaas量子阱和量子点结构的光学特性。

Optical properties in InGaAs quantum dots on SiO_2-patterned vicinal (001) GaAs substrate

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