Growth of intersubband GaN/AlGaN heterostructures

机译：子带间GaN / AlGaN异质结构的生长

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GaN/AlN multiple quantum wells (MQWs), designed for intersubband (ISB) absorption in the telecommunication range, are grown by molecular beam epitaxy. We demonstrate that the use of both AlN template and optimized growth temperature allows to reach ISB transition energy in the telecom range, i.e. above 0.8 eV (λ= 1.55 μm). Absorption spectra exhibit narrow linewidth (< 50 meV) with a relative energy broadening of 8%. An electro-optical modulator based on electron tunnelling in coupled QWs is then fabricated. A modulation bandwidth of 2 GHz at -3 dB cut off frequency is achieved for 15×15 μm~2 mesas. We show that the modulation rate is limited by the device geometry rather than by the material quality, which makes this technology a good candidate for THz regime.

机译：通过分子束外延生长设计用于电信范围内子带间（ISB）吸收的GaN / AlN多量子阱（MQW）。我们证明，使用AlN模板和优化的生长温度都可以在电信范围内（即高于0.8 eV（λ= 1.55μm））达到ISB转换能量。吸收光谱显示出较窄的线宽（<50 meV），相对能量展宽了8％。然后，制造了基于耦合QW中电子隧穿的电光调制器。对于15×15μm〜2台面，在-3 dB截止频率下可获得2 GHz的调制带宽。我们表明，调制速率受设备几何形状的限制，而不是受材料质量的限制，这使该技术成为太赫兹制式的理想选择。

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来源
《Quantum sensing and nanophotonic devices VII》|2010年|P.76080H.1-76080H.10|共10页
会议地点 San Francisco CA(US)
作者
A. Dussaigne; rnS. Nicolay; rnD. Martin; rnA. Castiglia; rnN. Grandjean; rnL. Nevou; rnH. Machhadani; rnM. Tchernycheva; rnL. Vivien; rnF.H. Julien; rnT. Remmele; rnM. Albrecht;
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作者单位

Ecole Polytechnique Federate de Lausanne (EPFL), IPEQ, CH.1015 Lausanne, Switzerland;

rnEcole Polytechnique Federate de Lausanne (EPFL), IPEQ, CH.1015 Lausanne, Switzerland;

rnEcole Polytechnique Federate de Lausanne (EPFL), IPEQ, CH.1015 Lausanne, Switzerland;

rnEcole Polytechnique Federate de Lausanne (EPFL), IPEQ, CH.1015 Lausanne, Switzerland;

rnEcole Polytechnique Federate de Lausanne (EPFL), IPEQ, CH.1015 Lausanne, Switzerland;

rnIEF, UMR8622-CNRS, Universite Paris-Sud, 91405 Orsay cedex, France;

rnIEF, UMR8622-CNRS, Universite Paris-Sud, 91405 Orsay cedex, France;

rnIEF, UMR8622-CNRS, Universite Paris-Sud, 91405 Orsay cedex, France;

rnIEF, UMR8622-CNRS, Universite Paris-Sud, 91405 Orsay cedex, France;

rnIEF, UMR8622-CNRS, Universite Paris-Sud, 91405 Orsay cedex, France;

rnInstitut fuer Krista;

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原文格式 PDF
正文语种 eng
中图分类 TP212;
关键词
III-V nitrides; intersubband absorption; molecular beam epitaxy; electro-optical modulator;

机译：III-V族氮化物；子带间吸收；分子束外延电光调制器;

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2. Intersubband Transitions in Nonpolar m-Plane AlGaN/GaN Heterostructures [J] . Trang Nguyen, MohammadAli Shirazi-Hosseini-Dokht, Yang Cao, Physica status solidi . 2018,第13期

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3. Intersubband Transitions in Nonpolar m-Plane AlGaN/GaN Heterostructures [J] . Trang Nguyen, MohammadAli Shirazi-Hosseini-Dokht, Yang Cao, Physica status solidi . 2018,第13期

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4. Growth of intersubband GaN/AlGaN heterostructures [C] . A. Dussaigne, S. Nicolay, D. Martin, SPIE Conference on Quantum Sensing and Nanophotonic Devices . 2010

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Growth of intersubband GaN/AlGaN heterostructures

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