Guangzhou Research Institute of Non-Ferrous Metals,Guangzhou 510651,China;
Guangzhou Research Institute of Non-Ferrous Metals,Guangzhou 510651,China;
Guangzhou Research Institute of Non-Ferrous Metals,Guangzhou 510651,China;
Guangzhou Research Institute of Non-Ferrous Metals,Guangzhou 510651,China;
Guangzhou Research Institute of Non-Ferrous Metals,Guangzhou 510651,China;
thin films; (Cr,Ti,Al)N; mid-frequency magnetron sputtering; ion beam assisted; multi-component;
机译:Ar离子束辅助和退火温度对反应性DC磁控溅射沉积TiO2薄膜性能的影响
机译:反应磁控溅射沉积Ti2AlN薄膜的温度依赖性组织演变
机译:反应中频双磁控溅射中Ti / TiN多层膜的研究
机译:氧含量对氧离子束辅助脉冲反应磁控溅射沉积的Al_2O_3薄膜微结构和光学性能的影响
机译:在高温“智能”摩擦应用中,在封闭场不平衡磁控溅射中反应性沉积的氮化铝压电薄膜。
机译:反应性射频磁控溅射沉积β-WO3薄膜的HRTEM显微结构表征
机译:溅射电流对反应性不平衡磁控共溅射沉积(Ti1-xCrx)N薄膜结构和形貌的影响