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首页> 外文会议>Reliability, packaging, testing, and characterization of MEMS/MOEMS and nanodevices IX >Development of Microlens Array (MLA) for Maskless Photolithography Application
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Development of Microlens Array (MLA) for Maskless Photolithography Application

机译：用于无掩模光刻的微透镜阵列（MLA）的开发

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A microlens array (MLA) was developed based on isotropic wet etching of quartz and coating of polymer on the etched substrate for maskless lithography application. Through the optimized manufacturing procedures, uniform elements, excellent light focusing ability, and dense fill factor were obtained. The fabricated MLA has the focal length ranging from 32.2 to 45.4 μm depending on the etching time and the thickness of the coated polymer. The collimated light was uniformly focused on the whole focal plane after passing through the fabricated array of microlenses and the size of the each focused beam was ～1.5 μm. By using the compact imaging ability of the miniaturized lenses, the MLA was applied to UV photolithography process. The illuminated UV passing the MLA focused on the photoresist, producing micron scale pattern array. Various sizes and shapes of micropattern arrays were realized onto the PR via controlling the experimental variables. Even at high temperature, the MLA performances were not changed indicating thermal stability of the developed MLA.
机译：基于石英的各向同性湿法蚀刻以及在蚀刻后的基板上涂覆聚合物以进行无掩模光刻应用，开发了微透镜阵列（MLA）。通过优化的制造程序，可以获得均匀的元件，出色的聚光能力和密集的填充因子。根据蚀刻时间和涂覆聚合物的厚度，制成的MLA的焦距范围为32.2至45.4μm。准直光穿过微透镜阵列后，均匀聚焦在整个焦平面上，每个聚焦光束的大小约为1.5μm。通过使用小型透镜的紧凑成像能力，MLA被应用于紫外光刻工艺。穿过MLA的被照射的紫外线聚焦在光致抗蚀剂上，产生微米级的图案阵列。通过控制实验变量，在PR上实现了各种尺寸和形状的微图案阵列。即使在高温下，MLA性能也没有改变，这表明已开发的MLA具有热稳定性。

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