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Impact of failure criteria on electromigration of W-plug contact

机译:失效标准对W插头触点电迁移的影响

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This work presents an investigation of the impact of failurencriteria on electromigration of a W-plug contact by using highnresolution resistance measurement (HRRM). It is found that the medianntime to failure, T50, linearly increases with an increasingnfailure criterion, while the shape parameter, σ, shows littlenchange. The choice of failure criterion has a significant impact on thenactivation energy Ea calculated based on the resistancenmeasurement. It has been demonstrated that this impact is an artificialnresult due to calculation without taking the ambient temperaturendependent effects into account. The actual Ea is found to ben0.78 eV, independent of the failure criterion. It suggests thatninterfacial diffusion, rather than bulk diffusion, is a primarynmechanism of bamboo structures in EM measurements
机译:这项工作通过使用高分辨率电阻测量(HRRM)提出了故障准则对W插头触点电迁移影响的研究。结果表明,失效时间的中位数T 50 随着失效准则的增加而线性增加,而形状参数σ几乎没有变化。失效准则的选择对基于电阻测量法计算出的活化能E a 有重要影响。已经证明,这种影响是人为的,由于计算而没有考虑环境温度相关的影响。实际的E a 被发现为ben0.78 eV,与失效准则无关。这表明在电磁测量中,界面扩散而不是整体扩散是竹结构的主要机制。

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