Interferometric lithography at 46.9 nm

机译：46.9 nm的干涉光刻

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We present the first results of nano-patterning in poly-methyl methacrylate (PMMA) photo-resist using a 46.9 nm tabletop extreme ultraviolet (EUV) laser. As a proof of principle, we recorded a Fresnel diffraction pattern of a copper mesh with 19 μm square holes. Results of ongoing interference experiments will also be presented.

机译：我们介绍了使用46.9 nm台式极紫外（EUV）激光在聚甲基丙烯酸甲酯（PMMA）光致抗蚀剂中进行纳米构图的第一个结果。作为原理上的证明，我们记录了具有19μm方孔的铜网的菲涅耳衍射图。还将进行正在进行的干扰实验的结果。

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来源
《RIAO/OPTILAS 2004》|2004年|P.735-738|共4页
会议地点 Porlamar (VE)
作者
M. G. Capeluto; G. Vaschenko; M. E. Grisham; M. C. Marconi; C. S. Menoni; J. J. Rocca; S. Luduena; L. Pietrasanta;
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作者单位

Departamento de Fisica, Universidad de Buenos Aires, Argentina;

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会议组织
原文格式 PDF
正文语种 eng
中图分类应用光学;
关键词
EUV lithography; interferometric lithography; nanopatterning;

机译：EUV光刻；干涉光刻；纳米成像;

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专利

1. Nanopatterning with interferometric lithography using a compact /spl lambda/=46.9-nm laser [J] . Capeluto M.G., Vaschenko G., Grisham M., IEEE transactions on nanotechnology . 2006,第1期

机译：使用紧凑型/ spl lambda / = 46.9 nm激光的干涉光刻法进行纳米图案形成
2. Simulation of the 45-nm half-pitch node with 193-nm immersion lithography-imaging interferometric lithography and dipole illumination [J] . Abani Biswas, Steven R. J. Brueck Journal of Microlithography, Microfabrication, and Microsystems. (JM3) . 2004,第1期

机译：用193nm浸没式光刻成像干涉光刻和偶极子照明对45nm半节距节点进行仿真
3. Simulation of the 45-nm half-pitch node with 193-nm immersion lithography-imaging interferometric lithography and dipole illumination [J] . Abani Biswas, Steven R. J. Brueck Journal of Microlithography, Microfabrication, and Microsystems. (JM3) . 2004,第1期

机译：用193nm浸没式光刻成像干涉光刻和偶极子照明对45nm半节距节点进行仿真
4. Interferometric lithography with sub-100-nm resolution using a tabletop 46.9-nm laser [C] . P. W. Wachulak, D. Patel, M.G. Capeluto, Soft X-Ray Lasers and Applications VII; Proceedings of SPIE-The International Society for Optical Engineering; vol.6702 . 2007

机译：使用台式46.9 nm激光器以低于100 nm的分辨率进行干涉光刻
5. Fabrication of Bragg gratings using interferometric lithography. [D] . Pizarro, Ricardo Andres. 2007

机译：使用干涉光刻技术制作布拉格光栅。
6. Large-Area Semiconducting Graphene Nanomesh Tailored by Interferometric Lithography [O] . Alireza Kazemi, Xiang He, Seyedhamidreza Alaie, -1

机译：干涉光刻技术定制的大面积半导体石墨烯纳米网
7. Laser interference lithography with highly accurate interferometric alignment [O] . Frank J. Van Soest, Hugo J. W. M. Hoekstra, Rene ́ M. De, 2015

机译：激光干涉光刻，具有高度精确的干涉对准
8. Alignment of X-ray Lithography Masks Using a New Interferometric Technique - Experimental Results. [R] . Austin, S., Flanders, D. C., Smith, H. I. 1977

机译：使用新的干涉技术对准X射线光刻掩模 - 实验结果。

Interferometric lithography at 46.9 nm

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