首页> 外文会议>Silicon carbide and related materials 2012 >Study of the effects of growth rate, miscut direction and postgrowth argon annealing on the surface morphology of homoepitaxially grown 4H silicon carbide films
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Study of the effects of growth rate, miscut direction and postgrowth argon annealing on the surface morphology of homoepitaxially grown 4H silicon carbide films

机译:研究生长速率,错切方向和后生长氩退火对同质外延生长4H碳化硅薄膜表面形态的影响

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摘要

we study the surface morphology of homoepitaxially grown 4H silicon carbide in terms of growth rate, miscut direction of the substrate and post growth argon thermal annealings. All the results indicate that the final surface morphology is the result of a competition between energetic reorganization and kinetic randomness. Because in all observed conditions energetic reorganization favors surface ondulations ("step bunching"), out-of-equilibrium conditions are one of the keys to favor the reduction of the surface roughness to values below ~0.5 nm. We theoretically support these results using kinetics superlattice Monte Carlo simulations (KslMC).
机译:我们研究了同质外延生长的4H碳化硅的表面形貌,涉及生长速率,基板的误切方向以及生长后氩热退火。所有结果表明,最终的表面形态是能量重组与动力学随机性竞争的结果。因为在所有观察到的条件下,高能重组都有利于表面杂化(“阶梯状聚束”),所以不平衡条件是促使表面粗糙度降低至约0.5 nm以下值的关键之一。从理论上讲,我们使用动力学超晶格蒙特卡洛模拟(KslMC)支持这些结果。

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  • 来源
  • 会议地点 St. Petersburg(RU)
  • 作者单位

    Consiglio Nazionale delle Ricerche, Istituto di Microelettronica e Microsistemi CNR-IMM, Z.I. Ⅷ Strada 5195121 Catania, Italy,Epitaxial Technology Center, XVI Strada, Pantano d'Arci, 95121 Catania, Italy;

    Consiglio Nazionale delle Ricerche, Istituto di Microelettronica e Microsistemi CNR-IMM, Z.I. Ⅷ Strada 5195121 Catania, Italy,Epitaxial Technology Center, XVI Strada, Pantano d'Arci, 95121 Catania, Italy;

    Consiglio Nazionale delle Ricerche, Istituto di Microelettronica e Microsistemi CNR-IMM, Z.I. Ⅷ Strada 5195121 Catania, Italy;

    Consiglio Nazionale delle Ricerche, Istituto di Microelettronica e Microsistemi CNR-IMM, Z.I. Ⅷ Strada 5195121 Catania, Italy,Epitaxial Technology Center, XVI Strada, Pantano d'Arci, 95121 Catania, Italy;

    Consiglio Nazionale delle Ricerche, Istituto di Microelettronica e Microsistemi CNR-IMM, Z.I. Ⅷ Strada 5195121 Catania, Italy;

    Consiglio Nazionale delle Ricerche, Istituto di Microelettronica e Microsistemi CNR-IMM, Z.I. Ⅷ Strada 5195121 Catania, Italy;

    Consiglio Nazionale delle Ricerche, Istituto di Microelettronica e Microsistemi CNR-IMM, Z.I. Ⅷ Strada 5195121 Catania, Italy;

    Consiglio Nazionale delle Ricerche, Istituto di Microelettronica e Microsistemi CNR-IMM, Z.I. Ⅷ Strada 5195121 Catania, Italy;

    Epitaxial Technology Center, XVI Strada, Pantano d'Arci, 95121 Catania, Italy;

    Epitaxial Technology Center, XVI Strada, Pantano d'Arci, 95121 Catania, Italy;

    Epitaxial Technology Center, XVI Strada, Pantano d'Arci, 95121 Catania, Italy;

    Epitaxial Technology Center, XVI Strada, Pantano d'Arci, 95121 Catania, Italy;

    LPE spa, Via falzarego 8. 20021 Baranzate, Italy;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    surface morphology; surface instabilities; step bunching;

    机译:表面形态表面不稳定性步束;

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