Radiation defects produced in 4H-SiC epilayers by proton and alpha-particle irradiation

机译：质子和α粒子辐照在4H-SiC外延层中产生的辐照缺陷

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Electronic properties of radiation damage produced in 4H-SiC epilayer by proton and alpha-particle irradiation were investigated and compared. 4H-SiC epilayers, which formed the low-doped n-base of Schottky barrier power diodes, were irradiated to identical depth with 550 keV protons and 1.9 MeV alphas. Radiation defects were then characterized by capacitance deep-level transient spectroscopy and C-V measurements. Results show that both projectiles produce identical, strongly localized damage peaking at ion's projected range. Radiation defects have a negligible effect on dynamic characteristic of irradiated 4H-SiC Schottky diodes, however acceptor character of introduced deep levels and their high introduction rates deteriorate diode's ON-state resistance already at very low irradiation fluences.

机译：研究并比较了质子和α粒子辐照在4H-SiC外延层中产生的辐射损伤的电子性质。形成低掺杂n型肖特基势垒功率二极管的4H-SiC外延层被550 keV质子和1.9 MeVα辐照到相同的深度。然后通过电容深层瞬态光谱和C-V测量来表征辐射缺陷。结果表明，两种弹丸在离子的投射范围内均产生相同的强烈局部破坏峰。辐射缺陷对被辐射的4H-SiC肖特基二极管的动态特性的影响可忽略不计，但是，在很低的辐射通量下，引入的深能级的受体特性及其高引入速率已经使二极管的导通电阻变差。

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来源
《Silicon carbide and related materials 2012》|2012年|661-664|共4页
会议地点 St. Petersburg(RU)
作者
Pavel Hazdra; Vit Zahlava; Jan Vobecky; Maxime Berthou; Andrei Mihaila;
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作者单位

Department of Microelectronics, Faculty of Electrical Engineering, Czech Technical University in Prague, Technicka 2, CZ-16627 Prague 6, Czech Republic;

Department of Microelectronics, Faculty of Electrical Engineering, Czech Technical University in Prague, Technicka 2, CZ-16627 Prague 6, Czech Republic;

Department of Microelectronics, Faculty of Electrical Engineering, Czech Technical University in Prague, Technicka 2, CZ-16627 Prague 6, Czech Republic,ABB Switzerland Ltd., Semiconductors, Fabrikstrasse 3, CH-5600 Lenzburg, Switzerland;

Centro Nacional de Microelectronica, CNM-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, Spain;

ABB Switzerland Ltd., Corporate Research, Segelhofstrasse 1K, CH-5405, Baden-Dattwil, Switzerland;

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原文格式 PDF
正文语种 eng
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关键词
silicon carbide; radiation defects; protons; alpha-particles;

机译：碳化硅辐射缺陷；质子阿尔法粒子;

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专利

1. Radiation defects produced in 4H-SiC epilayers by proton and alpha-particle irradiation [J] . Pavel Hazdra, Vit Zahlava, Jan Vobecky, Materials science forum . 2013,第期

机译：质子和α粒子辐照在4H-SiC外延层中产生的辐照缺陷
2. Accurate Identification of Radiation Defect Profiles in Silicon after Irradiation with Protons and Alpha-Particles in the MeV Range [J] . Pavel Hazdra, Volodymyr V. Komarnitskyy Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2004,第0期

机译：准确识别MeV范围内的质子和α粒子辐照后硅中的辐射缺陷轮廓
3. Effect of gamma-ray irradiation on the device process-induced defects in 4H-SiC epilayers [J] . T. Miyazaki, T. Makino, A. Takeyama, Superlattices and microstructures . 2016,第nova期

机译：γ射线辐照对器件过程中4H-SiC外延层缺陷的影响
4. Radiation defects produced in 4H-SiC epilayers by proton and alpha-particle irradiation [C] . Pavel Hazdra, Vit Zahlava, Jan Vobecky, European conference on silicon carbide and related materials . 2013

机译：通过质子和α-粒子辐射在4H-SiC脱落剂中产生的辐射缺陷
5. Deep Level Defects in Advanced III-Nitride Semiconductors: Presence, Properties and Impact of Proton Irradiation [D] . Zhang, Zeng. 2016

机译：高级III族氮化物半导体中的深度缺陷：质子辐照的存在，性质和影响
6. Effects of 5 MeV Proton Irradiation on Nitrided SiO2/4H-SiC MOS Capacitors and the Related Mechanisms [O] . Dongxun Li, Yuming Zhang, Xiaoyan Tang, 2020

机译：5 MeV质子辐射对氮化SiO2 / 4H-SiC MOS电容的影响及相关机制
7. Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences [O] . Omotoso, Ezekiel, Meyer, W.E. (Walter Ernst), Auret, F.D. (Francois Danie), 2016

机译：Ni / 4H-siC肖特基势垒二极管对不同能量的α粒子辐照的响应

Radiation defects produced in 4H-SiC epilayers by proton and alpha-particle irradiation

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