Reactive ion etching of 6H-SiC in CHF_3 plasma

机译：CHF_3等离子体中6H-SiC的反应离子刻蚀

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

Reactive ion etching of 6H-SiC in CHF_3 plasma is reported. The effect of O_2 and H_2 additives to CHF3 on the etch rate and residue formation is reported. H_2 flow rates sufficient for residue-free etching conditions, and the corresponding etch rates, are obtained at four different levels of O_2 percentages (0,10, 50, and 90%).

机译：报道了在CHF_3等离子体中对6H-SiC的反应离子刻蚀。报道了CHF3中O_2和H_2添加剂对刻蚀速率和残留物形成的影响。在四个不同水平的O_2百分比（0、10、50和90％）下，可以获得足够的无残留蚀刻条件的H_2流速和相应的蚀刻速率。

著录项

来源
《Silicon carbide and related materials》|1993年|317-320|共4页
会议地点 Washington DC(US);Washington DC(US)
作者
P. H. Yih; A. J. Steckl;
展开▼
作者单位

Nanoelectronics Laboratory, Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, OH 45221-0030;

Nanoelectronics Laboratory, Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, OH 45221-0030;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类硅酸盐工业;无机质材料;
关键词

相似文献

外文文献
中文文献
专利

1. Texturization of ZnO:Al surface by reactive ion etching in SF_6/Ar, CHF_3/ Ar plasma for application in thin film silicon solar cells [J] . Gourab Das, Sukanta Bose, Jayasree R. Sharma, Journal of materials science . 2018,第8期

机译：通过在SF_6 / Ar，CHF_3 / Ar等离子体中进行反应离子刻蚀对ZnO：Al表面进行织构化，以用于薄膜硅太阳能电池
2. Effect of CHF_3 Addition on Reactive Ion Etching of Aluminum Using Inductively Coupled Plasma [J] . Shuichi SAITO, Kazuyuki SUGITA, Junichi ToNOTANI Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2005,第5A期

机译：CHF_3的添加对电感耦合等离子体铝反应性离子刻蚀的影响
3. Reactive-ion etching of Sn-doped Ge_2Sb_2Te_5 in CHF_3/O_2 plasma for non-volatile phase-change memory device [J] . Cheng Xu, Bo Liu, Zhitang Song, Thin Solid Films . 2008,第21期

机译：非易失性相变存储器件中CHF_3 / O_2等离子体中Sn掺杂Ge_2Sb_2Te_5的反应离子刻蚀
4. Reactive ion etching of 6H-SiC in CHF_3 plasma [C] . International conference on SiC and related materials . 1994

机译：6H-SiC在CHF_3等离子体中的反应离子蚀刻
5. Studies of the effects of fluorocarbon deposition and etching on silicon and silicon dioxide etching processes using methyl trifluoride in an inductively coupled plasma reactor, and the development of a reactive ion beam system for the study of plasma-surface interaction mechanisms. [D] . Rueger, Neal R. 1998

机译：在感应耦合等离子体反应器中研究碳氟化合物沉积和蚀刻对硅和二氧化硅蚀刻工艺的影响（使用三氟化甲基），并开发了用于研究等离子体与表面相互作用机理的反应离子束系统。
6. Effect of reactive and un-reactive substrates on photopolymerization of self-etching adhesives with different aggressiveness [O] . Ying ZHANG, Yong WANG -1

机译：反应性衬底对不同侵袭性自蚀刻粘合剂光聚合的影响
7. Formation of distinctive structures of GaN by inductively-coupled-plasma and reactive ion etching under optimized chemical etching conditions [O] . N. Okada, K. Nojima, N. Ishibashi, 2017

机译：在优化的化学蚀刻条件下通过电感耦合等离子体和反应离子蚀刻形成独特的GaN结构
8. Effects of Plasma Induced Damage on the Channel Layers of Ion Implanted GaAs MESFETs during Reactive Ion Etching (RIE) and Plasma Ashing Processes. [R] . Ahn, H., Ji, H., Mun, J., 2003

机译：等离子体诱导损伤对离子注入Gaas mEsFET在反应离子刻蚀（RIE）和等离子体灰化过程中通道层的影响。

Reactive ion etching of 6H-SiC in CHF_3 plasma

摘要

著录项

相似文献

相关主题

期刊订阅