Electrical characterization of (6H) SiC MOS capacitors at high temperature

机译：高温下（6H）SiC MOS电容器的电气特性

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Low frequency conductance and capacitance measurements have been performed from lHz to 100kHz in the 293-673 K temperature range, on MOS capacitors made on (6H) SiC material. The energy distribution of the trap time constants , capture cross sections and interface state density is presented. The experimental results show that the (6H) SiC-SiO_2 system is qualitatively similar to that of the Si-SiO_2 interface. Conductance measurements performed at high temperature indicate the presence of deep bulk levels.

机译：在以（6H）SiC材料制成的MOS电容器上，在293-673 K温度范围内从1Hz到100kHz进行了低频电导和电容测量。给出了陷阱时间常数，俘获截面和界面态密度的能量分布。实验结果表明，（6H）SiC-SiO_2体系与Si-SiO_2界面在质量上相似。在高温下进行的电导测量表明存在较深的堆积水平。

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《Silicon carbide and related materials》|1993年|683-685|共3页
会议地点 Washington DC(US);Washington DC(US)
作者
T.Ouisse; N.Becourt; F.Templier; J.Vuillod; S.Cristoloveanu; T.Billon; J.L.Ponthenier; C.Jaussaud; F.Mondon;
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LPCS (URA-CNRS 840), ENSERG/INPG, BP257, 38016 Grenoble cedex, France;

LETI (CEA-Technologies Avancees), DMEL CENG, BP85X, 38041 Grenoble;

LMGP (URA CNRS 1109), ENSPG, BP46, 38042 St Martin d'Heres;

LPCS (URA-CNRS 840), ENSERG/INPG, BP257, 38016 Grenoble cedex, France;

LPCS (URA-CNRS 840), ENSERG/INPG, BP257, 38016 Grenoble cedex, France;

LETI (CEA-Technologies Avancees), DMEL CENG, BP85X, 38041 Grenoble;

Medin-Gerin DTE, rue Volta, Grenoble, France;

LETI (CEA-Technologies Avancees), DMEL CENG, BP85X, 38041 Grenoble;

LETI (CEA-Technologies Avancees), DMEL CENG, BP85X, 38041 Grenoble;

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正文语种 eng
中图分类硅酸盐工业;无机质材料;
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Electrical characterization of (6H) SiC MOS capacitors at high temperature

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