• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications >Stress Characterization of Tungsten-filled Through Silicon Via Arrays using Very High Resolution Multi-Wavelength Raman Spectroscopy
【24h】

Stress Characterization of Tungsten-filled Through Silicon Via Arrays using Very High Resolution Multi-Wavelength Raman Spectroscopy

机译：使用超高分辨率多波长拉曼光谱技术对钨填充硅通孔阵列进行应力表征

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Stress in Si adjacent to W-filled TSVs has been measured by multi-wavelength Raman spectroscopy (probe depth ranging from 290 to 645 nm) and compared to finite element modeling. The stress in Si from the TSVs increases with TSV width and is almost constant at the different depths probed in this study. The Raman signal is mainly due to the sum of the S_x and S_y stress components, perpendicular and parallel to the TSV bars. The S_x component is tensile and the S_y component is compressive, with the S_y component dominant in between the TSVs. However, ~10 μm from the edge of the TSV array, the two components are equal in magnitude so that the stress measured by Raman is zero, even though the individual S_x and S_y stresses are considerable. Hence, it is important to use finite element modeling in conjunction with Raman spectroscopy to characterize stresses in TSVs.
机译：已通过多波长拉曼光谱法（探针深度范围为290至645 nm）测量了与W填充TSV相邻的Si中的应力，并将其与有限元建模进行了比较。硅通孔中硅的应力随硅通孔宽度的增加而增加，并且在本研究中探测到的不同深度处几乎恒定。拉曼信号主要是由于垂直和平行于TSV条的S_x和S_y应力分量之和。 S_x分量是拉伸分量，S_y分量是压缩分量，其中S_y分量在TSV之间占主导地位。但是，距离TSV阵列的边缘约10μm，两个分量的大小相等，因此即使单独的S_x和S_y应力相当大，拉曼测量的应力也为零。因此，将有限元建模与拉曼光谱结合使用来表征TSV中的应力非常重要。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号