Edge Bonding Void Free Low Temperature Oxide-Oxide Direct Bonding Process.

机译：边缘键合无空隙的低温氧化物-氧化物直接键合工艺。

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This paper presents a new wafer bonding process used for back side illuminated (BSI) image sensors manufacturing, with high bonding energy of 2 J/m2, without peripheral edge bonding voids that occur with the standard process.

机译：本文提出了一种用于背面照明（BSI）图像传感器制造的新晶圆键合工艺，该工艺具有2 J / m2的高键合能，并且没有标准工艺中出现的周边边缘键合空隙。

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《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications》|2011年|p.145-151|共7页
会议地点 Montreal(CA);Montreal(CA)
作者
A. Castex; M. Broekaart; S.Thieffry; K. Landry; R. Fontaniere; C. Lagahe;
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作者单位

SOITEC, Pare Technologique des Fontaines, Bernin 38926 Crolles Cedex France;

SOITEC, Pare Technologique des Fontaines, Bernin 38926 Crolles Cedex France;

SOITEC, Pare Technologique des Fontaines, Bernin 38926 Crolles Cedex France;

SOITEC, Pare Technologique des Fontaines, Bernin 38926 Crolles Cedex France;

SOITEC, Pare Technologique des Fontaines, Bernin 38926 Crolles Cedex France;

SOITEC, Pare Technologique des Fontaines, Bernin 38926 Crolles Cedex France;

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正文语种 eng
中图分类材料;
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4. Edge Bonding Void Free Low Temperature Oxide-Oxide Direct Bonding Process [C] . A. Castex, M. Broekaart, S. Thieffry, International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications . 2011

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Edge Bonding Void Free Low Temperature Oxide-Oxide Direct Bonding Process.

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