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首页> 外文会议>Simulation of semiconductor processes and devices 1998(SISPAD98) >Effects of scaling and lattice heating on n-MOSFET performance via electrothermal Monte Carlo simulation
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Effects of scaling and lattice heating on n-MOSFET performance via electrothermal Monte Carlo simulation

机译：通过电热蒙特卡洛模拟对结垢和晶格加热对n-MOSFET性能的影响

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摘要

The technological advances which have enabled fabrication of devices ever deeper into the submicron regime have left many new and unexplored theoretical questions in their wake. In this study, we investigate the effect of self-heating on charge transport and oxide degradation in n-channel MOSFETs as a function of channel length and applied bias via the Monte Carlo and hydrody-namic methods. We demonstrate the increasing importance of self-heat ing with decreasing device dimension, and show that even moderate lattice heating can significantly suppress the high energy tail of the electron distribution function as well as influence the oxide degradation rate under normal device operation.
机译：技术进步使器件的制造可以深入到亚微米范围内，随之而来的还有许多新的和尚未探索的理论问题。在这项研究中，我们通过蒙特卡洛和水动力方法研究了自热对n沟道MOSFET中电荷传输和氧化物降解的影响，该效应是沟道长度和施加的偏压的函数。我们证明了随着器件尺寸的减小，自热的重要性日益提高，并且表明即使适度的晶格加热也可以显着抑制电子分布函数的高能尾部，并影响正常器件操作下的氧化物降解速率。

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