Modeling and Simulation of Oxygen Precipitation in CZ Silicon

机译：CZ硅中氧析出的建模与模拟

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This paper describes modeling and simulation for the growth and dissolution of oxygen precipitates in Czochralski silicon(CZ) wafers during heat treatment. Growth and dissolution rates are newly derived and inserted into a set of chemical rate equations(CREs) and a Fokker-Planck equation(FPE). Annealing am-bients and surface conditions are taken into account for solving continuity equations in order to calculate oxygen depth profile and oxygen precipitates density more precisely.

机译：本文介绍了在热处理过程中切克劳斯基硅（CZ）晶片中氧沉淀物的生长和溶解的建模和仿真。生长速率和溶出速率是新推导的，并插入到一组化学速率方程（CRE）和Fokker-Planck方程（FPE）中。为了求解连续性方程，需要考虑退火环境和表面条件，以便更精确地计算氧气深度分布和氧气沉淀物密度。

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来源
《Simulation of semiconductor processes and devices 1998(SISPAD98)》|1998年|388-391|共4页
会议地点 Leuven(BE);Leuven(BE)
作者
B. G. Ko; S. H. Yoon; K. D. Kwack;
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作者单位

Department of Electronic Engineering, Hanyang University Seoul 133-791, Korea;

Electronic Department, Doowon Institute of Technology Juksan, Ansung 456-890, Korea;

Department of Electronic Engineering, Hanyang University Seoul 133-791, Korea;

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正文语种 eng
中图分类半导体器件制造工艺及设备;
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1. Simulations of Iron Re-Dissolution from Oxygen Precipitates in Cz-Silicon and its Impact on Gettering Efficiency [J] . H. Vainola, P. Zhang, A. Haarahiltunen, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2004,第0期

机译：Cz-硅中氧气沉淀物中铁再溶解的模拟及其对吸杂效率的影响
2. Radial oxygen precipitation of a 12" CZ silicon crystal studied in-situ with high energy X-ray diffraction [J] . Christoph Bergmann, Johannes Will, Alexander Groeschel, Physica status solidi . 2014,第11期

机译：高能X射线衍射原位研究12“ CZ硅晶体的径向氧沉淀
3. Phonon scattering related to oxygen precipitation in Cz-silicon [J] . F. Zeller, K. LaBmann, W. Eisenmenger Physica, B. Condensed Matter . 1999,第0期

机译：声子散射与Cz硅中的氧沉淀有关
4. Modeling nd Simulation of Oxygen Precipitation in CZ Silicon [C] . B. G. Ko, S. H. Yoon, K. D. Kwack International conference on simulation of semiconductor devices and processes . 1998

机译：CZ硅氧沉淀的建模与仿真
5. Quantitative Modeling of Oxygen Precipitation in Silicon [D] . Yang, Yi. 2017

机译：硅氧沉淀的定量建模
6. Structural and electrical properties of oxygen complexes in Cz and FZ silicon crystals implanted with carbon ions [O] . Boris Romanyuk, Victor Melnik, Valentin Popov, 2014

机译：注入碳离子的Cz和FZ硅晶体中氧配合物的结构和电学性质
7. Modeling and Simulation of Oxygen Precipitation in CZ Silicon [O] . B. G. Ko, S. H. Yoon, K. D. Kwack 2014

机译：CZ硅中氧沉淀的建模与模拟
8. Effects of Carbon Concentration Upon Oxygen Precipitation in Cz Si [R] . Hahn, S. , Arst, M. , Ritz, K. N. , 1987

机译：碳浓度对Cz si中氧沉淀的影响

Modeling and Simulation of Oxygen Precipitation in CZ Silicon

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