Simulating RF Performance of Proton Irradiated AlGaN/GaN High Electron Mobility Transistors (HEMT)s

机译：模拟质子辐照的AlGaN / GaN高电子迁移率晶体管（HEMT）的RF性能

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AlGaN/GaN High Electron Mobility Transistors (HEMTS) subjected to proton irradiation of fluence up to 10~(14) cm~(-2) were simulated to observe the impact on small signal and RF characteristics. While a lot of work has covered dc degradation of HEMTs, very few studies exist which focus exclusively on RF degradation despite their high frequency applications. This work establishes a simulation framework capable of frequency domain device simulation up to 10 GHz. The role of defects generated by proton irradiation will be studied by carrying out low frequency transconductance simulation and current gain frequency sweeps to examine degradation of cut-off frequency. The primary objective will be to understand the role of partially ionized donor traps near the AlGaN/GaN interface and how their bias dependence and capture time constants may significantly impact cut-off frequency and current gain estimations at high frequencies.

机译：模拟了质子辐照量达10〜（14）cm〜（-2）的AlGaN / GaN高电子迁移率晶体管（HEMTS），以观察其对小信号和RF特性的影响。尽管有很多工作涉及HEMT的直流衰减，但很少有研究专门针对RF衰减进行研究，尽管它们的应用频率很高。这项工作建立了一个能够对高达10 GHz的频域设备进行仿真的仿真框架。质子辐照产生的缺陷的作用将通过进行低频跨导模拟和电流增益扫频来研究截止频率的降低来研究。主要目的是了解AlGaN / GaN界面附近的部分电离施主阱的作用，以及它们的偏置依赖性和捕获时间常数如何对高频下的截止频率和电流增益估计产生重大影响。

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《State-of-the-art program on compound semiconductors 58》|2015年|121-127|共7页
会议地点 Phoenix AZ(US)
作者
Shrijit Mukherjee; Erin Patrick; Mark E. Law;
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Department of Electrical and Computer Engineering University of Florida, Gainesville, FL, 32611;

Department of Electrical and Computer Engineering University of Florida, Gainesville, FL, 32611;

Department of Electrical and Computer Engineering University of Florida, Gainesville, FL, 32611;

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1. Impact of 100 keV proton irradiation on electronic and optical properties of AlGaN/GaN high electron mobility transistors (HEMTs) [J] . Khanal Min P., Uprety Sunil, Mirkhani Vahid, Journal of Applied Physics . 2018,第21期

机译：100 keV质子辐照对AlGaN / GaN高电子迁移率晶体管（HEMT）的电子和光学性能的影响
2. Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors [J] . Liu Lu, Velez Cuervo Camilo, Xi Yuyin, Journal of Vacuum Science & Technology . 2013,第4期

机译：质子辐照对AlGaN / GaN高电子迁移率晶体管的直流性能的影响
3. Hydrogen-Related Recovery Effect of AlGaN/GaN High-Electron-Mobility Transistors Irradiated by High-Fluence Protons [J] . Chen Ziwen, Yue Shaozhong, Peng Chao, IEEE Transactions on Nuclear Science . 2021,第2期

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4. Simulating RF Performance of Proton Irradiated AlGaN/GaN High Electron Mobility Transistors (HEMT)s [C] . Shrijit Mukherjee, Erin Patrick, Mark E. Law Meeting of the Electrochemical Society . 2015

机译：模拟质子辐照的Algan / GaN高电子迁移率晶体管（HEMT）的RF性能
5. The Effects of Thermal, Strain, and Neutron Irradiation on Defect Formation in AlGaN/GaN High Electron Mobility Transistors and GaN Schottky Diodes [D] . Lin, Chung-Han 2013

机译：热，应变和中子辐照对AlGaN / GaN高电子迁移率晶体管和GaN肖特基二极管中缺陷形成的影响
6. An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band [O] . Junfeng Li, Shuman Mao, Yuehang Xu, 2018

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7. Effect of Temperature on the Electronic Current of AlGaN/GaN High Electron Mobility Transistors (HEMT) [O] . 2011

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8. Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers. [R] . Tompkins, R. P., Nguyen, D. 2015

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Simulating RF Performance of Proton Irradiated AlGaN/GaN High Electron Mobility Transistors (HEMT)s

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