HRTEM Study of the Extended Defect Structure in Epitaxial Ba_(0.3)Sr_(0.7)TiO_3 Thin Films Grown on (001) LaAlO_3

机译：（001）LaAlO_3上生长的外延Ba_（0.3）Sr_（0.7）TiO_3薄膜中扩展缺陷结构的HRTEM研究

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The defect structure of a 350-nm-thick epitaxial Ba_(0.3)Sr_(0.7)TiO_3 thin film grown on (001) LaAlO_3 has been investigated using conventional and high-resolution transmission electron microscopy. The predominant defects in the film are threading dislocations (TDs) with Burgers vectors b = <100> and <110>. A high density of extended stacking faults (SFs) with displacement vectors R = (1/2)<110> were also observed in the near-interface region of the film. The faults are associated with dissociated dislocations and partial halfloops. Some findings about dislocation dissociation and the atomic structure of the (1/2)<110> faults are observed for the first time in perovskites to our knowledge. The mechanisms for the generation, dissociation and evolution of the TDs as well as for the formation mechanism of the SFs are discussed.

机译：使用常规和高分辨率透射电子显微镜研究了在（001）LaAlO_3上生长的350 nm厚外延Ba_（0.3）Sr_（0.7）TiO_3薄膜的缺陷结构。薄膜中的主要缺陷是汉堡位向量b = <100>和<110>的穿线位错（TDs）。在膜的近界面区域中还观察到高密度的扩展堆叠断层（SFs），其位移矢量为R =（1/2）<110>。断层与错位和部分半环相关。据我们所知，钙钛矿中首次观察到有关位错解离和（1/2）<110>断层的原子结构的一些发现。讨论了TDs的产生，解离和进化的机理以及SFs的形成机理。

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《Structure-Property Relationships of Oxide Surfaces and Interfaces II》|2002年|p.37-42|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
C.J. Lu; L.A. Bendersky; K. Chang; I. Takeuchi;
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Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA;

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正文语种 eng
中图分类化学;
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HRTEM Study of the Extended Defect Structure in Epitaxial Ba_(0.3)Sr_(0.7)TiO_3 Thin Films Grown on (001) LaAlO_3

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