Metalorganic chemical vapor deposition of aluminum oxide on silicon nitride

机译：在氮化硅上氧化铝的金属有机化学气相沉积

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Thin films of aluminum oxide were deposited on silicon nitride thin films using trimethylaluminum and oxygen at 0.5 Torr and 300 ℃. Fourier transform infrared (FTIR) and x-ray photoelectron spectroscopic (XPS) analyses of these films showed no aluminum silicate phase at the film-substrate interface. The O/Al ratio in the deposited film was found to be higher than that in stoichiometric Al_2O_3 indicating the presence of excess oxygen. FTIR spectroscopy and XPS of the annealed samples did not show any formation of silicon oxide, oxynitride or silicate at the aluminum oxide/silicon nitride interface. In contrast to aluminum oxide on clean silicon substrates, using ultrathin silicon nitride as a barrier layer could prevent excess oxygen migration towards the Si substrate and formation of any interfacial layers.

机译：使用三甲基铝和氧气在0.5托和300℃下将氧化铝薄膜沉积在氮化硅薄膜上。这些薄膜的傅立叶变换红外（FTIR）和X射线光电子能谱（XPS）分析表明，在薄膜与基材的界面处没有硅酸铝相。发现沉积膜中的O / Al比高于化学计量的Al_2O_3中的O / Al比，表明存在过量的氧。 FTIR光谱和退火样品的XPS没有显示出在氧化铝/氮化硅界面处有氧化硅，氧氮化物或硅酸盐的形成。与干净的硅基板上的氧化铝相反，使用超薄氮化硅作为阻挡层可以防止多余的氧气向Si基板迁移并防止任何界面层的形成。

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来源
《Structure-Property Relationships of Oxide Surfaces and Interfaces II》|2002年|p.133-138|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
Anindya Dasgupta; Abhijit Roy Chowdhuri; Christos G. Takoudis;
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Department of Chemical Engineering, University of Illinois at Chicago, 810 South Clinton Street, Chicago, Illinois 60607;

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原文格式 PDF
正文语种 eng
中图分类化学;
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1. Study of Dry Oxidation of Aluminum Nitride on Si(111) Substrate Grown by Metalorganic Chemical Vapor Deposition [J] . F. Wang, R. Zhang, X. Q. Xiu, Surface review and letters . 2003,第4期

机译：金属有机化学气相沉积法在氮化硅（111）衬底上干氮化铝的研究
2. A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition [J] . Washiyama Shun, Reddy Pramod, Kaess Felix, Journal of Applied Physics . 2018,第11期

机译：金属有机化学气相沉积法生长氮化铝镓的热力学过饱和模型
3. Growth of Atomically Flat-Surface Aluminum Nitride Epitaxial Film by Metalorganic Chemical Vapor Deposition [J] . Kensei UEHARA, Yuji AOTA, Suguru KAMEDA, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2005,第5A期

机译：金属有机化学气相沉积法生长原子平面氮化铝外延膜
4. Metalorganic chemical vapor deposition of aluminum oxide on silicon nitride [C] . Anindya Dasgupta, Abhijit Roy Chowdhuri, Christos G. Takoudis, Materials Research Society Symposium . 2003

机译：氮化硅氧化铝的金属化学化学气相沉积
5. The low-temperature thermal chemical vapor deposition and catalyzed chemical vapor deposition of aluminum nitride and silicon nitride [D] . Dupuie, Jeffrey L. 1991

机译：氮化铝和氮化硅的低温热化学气相沉积和催化化学气相沉积
6. Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Films [O] . Mateusz Œmietana, Robert Mroczyński, Norbert Kwietniewski 2014

机译：射频等离子体增强化学气相沉积（RF PECVD）反应器中样品高度对氮化硅薄膜光学性能和沉积速率的影响
7. Structural characterization of aluminum films deposited on sputtered‐titanium nitride/silicon substrate by metalorganic chemical vapor deposition from dimethylethylamine alane [O] . Xiaodong Li, Byoung‐Youp Kim, Shi‐Woo Rhee 1995

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8. Growth of Solid Solutions of Aluminum Nitride and Silicon Carbide by Metalorganic Chemical Vapor Deposition. [R] . Jenkins, I., Irvine, K. G., Spencer, M. G., 1992

机译：金属有机化学气相沉积法制备氮化铝和碳化硅固溶体。

Metalorganic chemical vapor deposition of aluminum oxide on silicon nitride

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