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首页> 外文会议>Symposium on Compound Semiconductor Surface Passivation and Novel Device Processing held April 5-7, 1999, San Francisco, California,U.S.A. >Development of low temperature silicon nitride and silicon dioxide films by inductively-coupled plasma chemical vapor deposition
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Development of low temperature silicon nitride and silicon dioxide films by inductively-coupled plasma chemical vapor deposition

机译：电感耦合等离子体化学气相沉积技术开发低温氮化硅和二氧化硅薄膜

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摘要

High-density plasma technology is becoming increasingly attractive for the deposition of dielectric films such as silicon nitride and silicon dioxide. In particular, inductively-coupled plasma chemical vapor deposition (ICPCVD) offers a great advantage for low temperature processing over plasma-enhanced chemical vapor deposition (PECVD) for a range of devices including compound semiconductors. In this paper, the development of low temperature (<200 deg C) silicon nitride and silicon dioxidefilms utilizing ICP technology will be discussed. The material properties of these films have been investigate das a function of ICP source power, rf chuck power, chamber pressure, gas chemistry, and temperature. The ICPCVD films will be compared to PECVD films in terms of wet etch rate, stress, and other film characteristics. Two differnt gas chemcistries, SiH_4/N_2/Ar and SiH_4/NH_3/He, were explored for the deposition of ICPCVD silicon nitride. The ICPCVD silicon dioxide films aere repared from SiH_4/O_2/Ar. The wet etch rates of both silicon nitride and silicon dioxide films are significantly lower than films prepared by conventional PECVD. This implies that ICPCVD films prepared at these low temperatures are of higher quality. The advanced ICPCVD technology can also be used for efficient void-free filling of high aspect ratio (3:1) sub-micron trenches.
机译：对于诸如氮化硅和二氧化硅的介电膜的沉积，高密度等离子体技术变得越来越有吸引力。尤其是，对于包括化合物半导体在内的一系列器件，与等离子体增强化学气相沉积（PECVD）相比，电感耦合等离子体化学气相沉积（ICPCVD）在低温处理方面具有巨大优势。在本文中，将讨论利用ICP技术开发低温（<200摄氏度）氮化硅和二氧化硅薄膜的方法。这些膜的材料特性已经通过ICP源功率，射频卡盘功率，腔室压力，气体化学成分和温度的函数进行了研究。 ICPCVD膜将在湿蚀刻速率，应力和其他膜特性方面与PECVD膜进行比较。探索了两种不同的化学气相沉积法SiH_4 / N_2 / Ar和SiH_4 / NH_3 / He，用于ICPCVD氮化硅的沉积。由SiH_4 / O_2 / Ar制备的ICPCVD二氧化硅膜。氮化硅膜和二氧化硅膜的湿蚀刻速率均显着低于常规PECVD制备的膜。这意味着在这些低温下制备的ICPCVD膜具有更高的质量。先进的ICPCVD技术还可用于高纵横比（3：1）亚微米沟槽的高效无空隙填充。

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