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Studies of the growth and local atomic bonding of a-C_xN_yH_z films

机译:a-C_xN_yH_z薄膜的生长和局部原子键研究

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A systematic study of the growth and local atomic bonding (LAB) of a series of a-C_xN_yH_z alloy films prepared via plasma enhanced chemical vapor deposition (PECVD) from mixtures of NH_3/C_2H_2 and N_2/C_2H_2 is presented. The effects of the reactants and their ratio on the film composition and bonding of hydrogen, the optical constants, and the optical energy gap have been determined. It is found that the presence of nitrogen and hydrogen in the plasma decreases the net film deposition rate due to enhanced etching and that incorporation of nitrogen into the film is limited to N/Capprox approx 0.1. For the films deposited from N_2/C_2H_2 as the concentration of N in the film increases, the concentration of C also increases while that of H decreases. No evidence for the type of bonding expected in the theoretically-predicted C_3N_4 compound has been found. It is observed that hydrogen is preferentially bonded to nitrogen and there is evidence for N-H...N hydrogen bonding in the films. The predictions of the free energy model (FEM) previously developed for the bonding in a-C_xN_yH_z alloys are compared with these experimental results. The importance of entropy in determining the most stable state of these alloys is demonstrated. The FEM successfully predicts and explains some of the experimentally-observed properties of the alloys.
机译:提出了通过等离子增强化学气相沉积(PECVD)从NH_3 / C_2H_2和N_2 / C_2H_2的混合物制备的一系列a-C_xN_yH_z合金膜的生长和局部原子键(LAB)的系统研究。已经确定了反应物及其比例对膜组成和氢键,光学常数和光能隙的影响。发现由于增强的蚀刻,等离子体中氮和氢的存在降低了净膜沉积速率,并且将氮掺入膜中被限制为约0.1的N / C。对于从N_2 / C_2H_2沉积的膜,随着膜中N浓度的增加,C的浓度也增加而H的浓度减少。尚未找到有关理论预测的C_3N_4化合物中预期键合类型的证据。观察到氢优先与氮键合,并且有证据表明膜中存在N-H ... N氢键。将先前为α-C_xN_yH_z合金中的键合开发的自由能模型(FEM)的预测与这些实验结果进行了比较。证明了熵在确定这些合金的最稳定状态中的重要性。有限元法成功地预测和解释了合金的一些实验观察特性。

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