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首页> 外文会议>Symposium on Growth, Evolution and Properties of Surfaces, Thin Films and Self-Organized Structures, Nov 27-Dec 1, 2000, Boston, Massachusetts, U.S.A. >Epitaxial Iridium Growth on Strontium Titanate
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Epitaxial Iridium Growth on Strontium Titanate

机译：钛酸锶外延铱生长

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摘要

Epitaxial (100) iridium films have been grown on (100) SrTiO_3 (STO) substrates by electron beam evaporation. The epitaxial relationship between the iridium film and STO substrate was determined to be Ir(001)[100]//STO(001)[100]. A systematic study of the role of STO substrate surface preparation, Ir thickness, and substrate temperature on Ir film crystallinity and morphology has been performed. The best Ir films typically have small Ir(200) XRD linewidths < 0.3℃, surface roughness of 0.2 nm, and low ion channeling yields, χmin≤4%, when deposited at 800℃. Films generally become smoother with better crystallinity when the film thickness approaches 300 nm. A growth mode with initial island formation and subsequent layer-by-layer appears to take place at higher substrate temperatures, whereas at lower temperatures the film grows in a 3D mode.
机译：通过电子束蒸发在（100）SrTiO_3（STO）衬底上生长了外延（100）铱膜。铱膜和STO衬底之间的外延关系被确定为Ir（001）[100] // STO（001）[100]。对STO基板表面制备，Ir厚度和基板温度对Ir膜结晶度和形态的作用进行了系统的研究。最好的Ir薄膜通常在800℃沉积时具有小的Ir（200）XRD线宽<0.3℃，表面粗糙度为0.2 nm和低的离子通道产率，χmin≤4％。当膜厚度接近300 nm时，膜通常会变得更光滑，并具有更好的结晶度。具有初始岛形成和随后的逐层生长的生长模式似乎发生在较高的基板温度下，而在较低的温度下，薄膜以3D模式生长。

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