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首页> 外文会议>Symposium on Ion Beam Synthesis and Processing of Advanced Materials held Nov 27-29, 2000, Boston, Massachusetts, U.S.A. >EFFECTS OF Ga-IRRADIATION ON PROPERTIES OF MATERIALS PROCESSED BY A FOCUSED ION BEAM (FIB)
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EFFECTS OF Ga-IRRADIATION ON PROPERTIES OF MATERIALS PROCESSED BY A FOCUSED ION BEAM (FIB)

机译：Ga辐照对聚焦离子束（FIB）处理的材料的性能的影响

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Focused Ion Beam (FIB) technology allows to process various materials within a lateral range below 100 nm. The feasibility to mechanically sputter as well as to direct-write nanostructures and the fact that Ga-ions arc utilized is unique for this method. The focused Ga-ions are used to locally induce a chemical vapor deposition of volatile precursor molecules adsorbed on a surface. Local deposition of metals and dielectrics has been achieved on a sub-urn scale utilizing a focused ion beam. This method is highly suitable for advanced microelectronic semiconductor fabrication. However, material specifications are narrow for these tailor-made applications. The effect of the Ga-ions implanted into the material both during sputtering and deposition has been realized as a key parameter for the function of FIB processed microelectronic devices. For Si-based semiconductors Ga can be used as dopant intentionally implanted into a Si substrate to locally modify the conductivity of Si. The results of locally confined ion irradiation on the surface roughness of a Si surface have been exploited by atomic force microscopy (AFM). Both local sputter depletion of the sample surface as well as sub-mil deposition of selected metals or dielectrics by ion-induced chemical vapor deposition (CVD) has been examined. The penetration depth and the distribution of Ga ions during the deposition process have been studied by simulation and experimentally by profiling with secondary ion mass spectroscopy (SIMS). Transmission Electron Microscopy (TEM) of cross-sections of the ion processed materials has revealed amorphisation of the crystalline substrate. For focused ion beam assisted deposition the effects of ion irradiation on the interface to the substrate and the local efficiency of the deposition are illustrated and discussed. The prospects of focused ion beam processing for modification of microelectronic devices in the sub-μm range and the limitations are demonstrated by the examples shown.
机译：聚焦离子束（FIB）技术允许在100 nm以下的横向范围内处理各种材料。机械溅射以及直接写入纳米结构的可行性以及利用Ga离子电弧的事实对该方法来说都是独一无二的。聚焦的Ga离子用于局部诱导吸附在表面上的挥发性前体分子的化学气相沉积。利用聚焦的离子束，可以在亚微米规模上实现金属和电介质的局部沉积。该方法非常适合于先进的微电子半导体制造。但是，对于这些量身定制的应用，材料规格很窄。 Ga离子在溅射和沉积过程中注入材料中的作用已被实现为FIB处理微电子器件功能的关键参数。对于基于Si的半导体，可以将Ga用作有意注入到Si衬底中的掺杂剂以局部地改变Si的导电性。通过原子力显微镜（AFM）已经利用了在Si表面的表面粗糙度上局部局限的离子辐照的结果。已经检查了样品表面的局部溅射消耗以及通过离子诱导化学气相沉积（CVD）进行的选定金属或电介质的亚密耳沉积。通过模拟和二次离子质谱分析（SIMS）进行了实验研究，研究了沉积过程中Ga离子的穿透深度和分布。离子处理材料的横截面的透射电子显微镜（TEM）显示了结晶基质的非晶化。对于聚焦离子束辅助沉积，说明并讨论了离子辐照在与基材的界面上的作用以及沉积的局部效率。通过所示的例子证明了聚焦离子束加工在亚微米范围内的微电子器件改性的前景和局限性。

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