Porosity-induced optical phonon engineering in III-V compounds

机译：III-V化合物中的孔隙度诱导的光子工程

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New possibilities for modifying the phonon spectra of III-V compounds are evidenced by micro-Raman analysis of porous layers prepared by electrochemical anodization of (111)A-oriented n-GaP substrates. In particular, a surface-related vibrational mode along with a porosity-induced decoupling between the longitudinal optical (LO) phonon and plasmon are observed. We prove that filling in the pores with other materials (aniline as a first approach) is a promising tool for controlling the surface phonon frequency.

机译：通过对（111）A取向n-GaP基板进行电化学阳极氧化制备的多孔层的显微拉曼分析，证明了修改III-V化合物声子光谱的新可能性。特别地，观察到与表面有关的振动模式，以及在纵向光学（LO）声子与等离激元之间的孔隙率引起的解耦。我们证明了用其他材料填充苯孔（作为第一方法的苯胺）是控制表面声子频率的有前途的工具。

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《Symposium on Microcrystalline and Nanocrystalline Semiconductors-1998 held November 30-December 3, 1998, Boston, Massachusetts, U.S.A.》|1998年|p.99-104|共6页
会议地点 Boston MA(US)
作者
I.M. Tiginyanu; G. Irmer; J. Monecke; H.L. Hartnagel; A. Vogt; C. Schwab; J.-J. Grob;
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正文语种 eng
中图分类无线电电子学、电信技术;
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4. Porosity-induced optical phonon engineering in III-V compounds [C] . I.M. Tiginyanu, G. Irmer, J. Monecke, Symposium on microcrystalline and nanocrystalline semiconductors . 1999

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Porosity-induced optical phonon engineering in III-V compounds

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