Electron beam excited plasma (EBEP) CVD is a novel fabrication route for poly Si. Deposition was carried out on Si and SiO_2 layer from pure SiH_4 without hydrogen dilution. Crystalline silicon (#mu#c-Si:H) films were made with electron acceleration voltage, discharge current, source gas flow rate, chamber presser, substrate temperature varied systematically. Average grain size was about 10 nm. Crystalline ratio was up to 0.7 at the maximum. The films contain about 19 atpercent hydrogen in spite of no dilution. It is considered that EBEP supplies much about atomic hydrogen due to the high decomposability of the source gas.
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