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首页> 外文期刊>Canadian Journal of Physics >Solid-phase crystallization of high growth rate amorphous silicon films deposited by gas-jet electron beam plasma CVD method
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Solid-phase crystallization of high growth rate amorphous silicon films deposited by gas-jet electron beam plasma CVD method

机译：气相电子束等离子体CVD法沉积高生长非晶硅膜的固相结晶

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摘要

Solid phase crystallization of amorphous silicon films (a-Si:H) deposited by gas-jet electron beam plasma chemical vapor deposition method and annealed at 700 ℃ in vacuum has been investigated. This method provides high deposition rates (up to 2.3 nm/s) of a-Si:H thin films in a standard vacuum chamber. The effects of varying the substrate temperature from 190 to 415 ℃ on the structural and optical properties of the as-deposited amorphous films and postannealed nanocrystalline films have been investigated. The crystallite size was determined by X-ray diffraction (about 5-8 nm) and agrees with that obtained from Raman scattering. The estimated degree of crystallinity was 45%-59%. Optical transmission spectra were recorded to investigate the optical properties and thickness of the silicon thin films. The refractive index and optical band gap data was obtained for both as-deposited amorphous and post-annealed nanocrystalline silicon. The behavior of the refractive index of nanocrystalline silicon depending on the substrate temperature is correlated with the crystalline volume fraction. a-Si:H films obtained at low temperatures have larger crystallite size and better crystallinity after annealing.
机译：研究了通过气体喷射电子束等离子体化学气相沉积法沉积并在700℃下真空退火的非晶硅膜（a-Si：H）的固相结晶。此方法可在标准真空室内提供高沉积速率（高达2.3 nm / s）的a-Si：H薄膜。研究了将衬底温度从190℃改变至415℃对沉积态非晶膜和退火后纳米晶膜的结构和光学性能的影响。微晶尺寸通过X射线衍射（约5-8nm）确定，并且与从拉曼散射获得的尺寸一致。估计的结晶度为45％-59％。记录光学透射光谱以研究硅薄膜的光学性质和厚度。对于沉积的非晶态和退火后的纳米晶硅，均获得了折射率和光学带隙数据。取决于衬底温度的纳米晶体硅的折射率的行为与晶体体积分数相关。低温获得的a-Si：H薄膜具有较大的晶粒尺寸，退火后具有更好的结晶度。

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