Preparation of Na_0.5K_0.5NbO-3/La_0.6Sr-0.2Mn_1.2O_3/LaAlO_3 thin film structures by pulsed laser deposition

机译：脉冲激光沉积制备Na_0.5K_0.5NbO-3 / La_0.6Sr-0.2Mn_1.2O_3 / LaAlO_3薄膜结构

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We report on ferroelectric/giant magnetoresistive Na_0.5K_0.5NbO_3/La_0.6Sr-0.2Mn_1.2O_3 (NKN/LSMO) heterostructures grown onto LaAlO_3 (001) single crystal using KrF pulsed laser ablation of stoichiometric ceramic target. Main processing parameters have been optimized to obtain smooth LSMO template layer, avoid NKN-LSMO interdiffusion, presserve NKN stoichiometry against the lost of volatile potassium and sodium and achieve reasonable reliability of NKN film performance. X-ray diffraction theta - 2 theta scans and rocking curves evidence for single-phase content and high c-axis orientation both in template LSMO and top NKN layers. Ferroelectric measurements yield remnant of 130 kV/cm. At room temperature, dielectric permittivifty epsilon and dissipation factor tan delta have been found to vary from 595 to 555 and 0.046 to 0.029 respectively in the frequency range of 0.4 to 20 kHz. At 10 kHz dielectric permittivity linearly increases from 410 to 650 in the temperature range 77 K to 415 K while the dissipation factor below 320 K does not exceed 3

机译：我们报告了使用化学计量陶瓷靶的KrF脉冲激光烧蚀生长在LaAlO_3（001）单晶上的铁电/巨磁阻Na_0.5K_0.5NbO_3 / La_0.6Sr-0.2Mn_1.2O_3（NKN / LSMO）异质结构。优化了主要加工参数，以获得平滑的LSMO模板层，避免NKN-LSMO相互扩散，保留NKN化学计量以防止挥发性钾和钠的损失，并获得合理的NKN膜性能可靠性。 X射线衍射theta-2 theta扫描和摇摆曲线证明了模板LSMO和顶层NKN层中的单相含量和高c轴取向。铁电测量得出的残余值为130 kV / cm。在室温下，已经发现介电常数ε和损耗因子tanδ在0.4至20kHz的频率范围内分别从595至555和0.046至0.029变化。在10 kHz时，介电常数在77 K至415 K的温度范围内从410线性增加至650，而低于320 K的耗散因数则不超过3

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《Symposium on Multicomponent Oxide Films for Electronics held April 6-8,1999,San francisco,California,U.S.A.》|1999年|p.249-254|共6页
会议地点 San Francisco CA(US)
作者
Choong-Rae Cho; S.I.Khartsev; A.M.Grishin; Ture Lindback;
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中图分类无线电电子学、电信技术;
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4. Preparation of Na_0.5K_0.5NbO-3/La_0.6Sr-0.2Mn_1.2O_3/LaAlO_3 thin film structures by pulsed laser deposition [C] . Choong-Rae Cho, S.I.Khartsev, A.M.Grishin, Symposium on multicomponent oxide films for electronics . 1999

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Preparation of Na_0.5K_0.5NbO-3/La_0.6Sr-0.2Mn_1.2O_3/LaAlO_3 thin film structures by pulsed laser deposition

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