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首页> 外文会议>Symposium on Optical Microstructural Characterization of Semiconductors held November 29-30, 1999, Boston, Massachusetts, U.S.A. >Cathodoluminescence from In_xGa_(1-x) layers grown on GaAs using a transmission electron microscope
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Cathodoluminescence from In_xGa_(1-x) layers grown on GaAs using a transmission electron microscope

机译：使用透射电子显微镜在GaAs上生长的In_xGa_（1-x）层的阴极发光

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摘要

In_xGa_(1-x)As epilayers grown on GaAs(100) were studied by cathodoluminescence (CL) spectroscopy and imaging technique with 0.8 nm spectral resolution, using a transmission electron micrsope. Lianear features appear in the monochromatic CL image taken by the emission from the In_xGa(1-x)As layers, and do not appear in those from the GaAs layers. There is no direct correlation between the dark-line contrast in the panchromatic CL image (due to misfit dislcations) and the strong line contrast in the monochromatic CL images of the In_xGa_(1-x)As layers. A peak wavelength shift in the Cl spectrum was observed as the electron probe was moved across the linear features. The linear features also appear in a thin sample where the misfit dislocations are removed by ion milling, which clearly reveals that the strong line contrast is not directly due to the misfit dislocation. From those results the linear features in the monochromatic CL image are considered to be due to compositional fluctuations of the In concentration in the In_xGa_(1-x)As alyer.
机译：使用透射电子显微镜，通过阴极发光（CL）光谱和具有0.8 nm光谱分辨率的成像技术研究了在GaAs（100）上生长的In_xGa_（1-x）As外延层。线性特征出现在由In_xGa（1-x）As层发出的单色CL图像中，而没有出现在GaAs层的单色CL图像中。 In_xGa_（1-x）As层的全色CL图像中的暗线对比度（由于失配斑点）与单色CL图像中的强线对比度没有直接关系。当电子探针移动穿过线性特征时，观察到Cl光谱中的峰值波长偏移。线性特征也出现在较薄的样品中，在该样品中通过离子铣削去除了错配位错，这清楚地表明，强直线对比度不是直接由于错配位错而引起的。根据这些结果，认为单色CL图像中的线性特征是由于In_xGa_（1-x）As分析仪中In浓度的组成波动所致。

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