BROADBAND; EMITTERS; ENERGY GAPS (SOLID STATE); EPITAXY; FABRICATION; HIGH RESOLUTION; LAMINATES; MICROSTRUCTURE; NITRIDES; SAPPHIRE; SEMICONDUCTORS (MATERIALS); SINGLE CRYSTALS; SUBSTRATES; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION; GaN AlN GaN/AlN; wide-band-gap III-V nitrides ultraviolet sensors light emitters fabrication SiC;
机译:透射电子显微镜观察在具有AlN中间层的GaN /蓝宝石模板上生长的Al_xGa_(1-x)N外延层的形貌和微观结构演变
机译:MOCVD在蓝宝石和6H-SiC衬底上生长的AlGaN / AlN / GaN异质结构中热电子的能量弛豫
机译:固体源分子束外延生长在SiC衬底上生长的SiC膜的透射电镜研究
机译:透射电子显微镜观察在具有AlN中间层的GaN /蓝宝石模板上生长的AlxGa(1-x)N外延层的形貌和微观结构演变
机译:通过发光光谱和X射线衍射测定在6H-SiC(0001)衬底上生长的GaN和Al(x)Ga(1-x)N薄膜的应变和组成。
机译:(001)-和(111)-SrTiO3衬底上生长的多铁性LaFeO3-YMnO3多层膜的显微结构表征
机译:在蓝宝石和6H-SIC基板上通过MOCVD生长的AlGaN / Aln / GaN异质结构中的热电子的能量放松
机译:(摘要)al(sub x)Ga(sub 1-x)N / siC多层结构的透射电子显微镜