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首页> 外文会议>Symposium on Optical Microstructural Characterization of Semiconductors held November 29-30, 1999, Boston, Massachusetts, U.S.A. >Photoluminescence and photoluminescence excitation mechanisms for porous silicon and silicon oxynitride
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Photoluminescence and photoluminescence excitation mechanisms for porous silicon and silicon oxynitride

机译：多孔硅和氮氧化硅的光致发光和光致发光激发机理

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摘要

SThrough a comparative study of the light emisson and light excitation property of porous silicon (PS) and Si oxide, photoluminescence (PL) and photoluminescence excitation (PLE) mechanisms for blue-light-emitting PS are analyzed, Strong blue light (445nm) and ultraviolet light (365nm) emission from silicon-rich silicon oxyntride films at room temperature were observed. An analysis of the PL and PLE spectra of PS and Si oxide indicated that for blue-lith emission from PS, there are two types of photoexcitation processes: photo-excitation occurring in nanometer Si particles (NSP's) and in the Si oxide layers covring NSPs, and radiative recombination of electron-hole pairs taking place in luminescence centers (LCs) located on the interfaces between NSP's and Si oxide and those inside Si oxide layers. The PL spectra of silicon-rich silicon oxynitride film implies that the PL originated from some LCs in SiO_x and SiO_xN_y:H, while PLE spectra inducates that photoexciation occurs in NSPs, SiO_x and SiO_xN_y:H. The 365 nm band is attributed to the former two photoexcitation processes and the 445 nm one to the third process. As such, the quantum confinement/luminescence center model appears to be a satisfactory modeo in explaining the experimental results.
机译：通过对多孔硅（PS）和氧化硅的光发射和光激发特性的比较研究，分析了发射蓝光的PS的光致发光（PL）和光致发光激发（PLE）机制，强蓝光（445nm）和在室温下观察到了富硅氧氮化硅薄膜发出的365nm紫外光。对PS和Si氧化物的PL和PLE光谱的分析表明，对于PS发出的蓝光，有两种类型的光激发过程：光激发发生在纳米Si颗粒（NSP）和包裹NSP的Si氧化物层中，并且电子-空穴对的辐射复合发生在位于NSP和Si氧化物与Si氧化物层内部的界面之间的发光中心（LC）中。富硅氮氧化硅薄膜的PL光谱表明，PL起源于SiO_x和SiO_xN_y：H中的某些LC，而PLE光谱则诱导了NSP，SiO_x和SiO_xN_y：H中发生光激发。 365 nm波段归因于前两个光激发过程，而445 nm归因于第三个光激发过程。这样，在解释实验结果时，量子限制/发光中心模型似乎是令人满意的模式。

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