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首页> 外文会议>Symposium on Optical Microstructural Characterization of Semiconductors held November 29-30, 1999, Boston, Massachusetts, U.S.A. >Confocal micro-raman characterization of SiC epilayers
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Confocal micro-raman characterization of SiC epilayers

机译：SiC外延层的共聚焦显微拉曼表征

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摘要

The large visible optical penetration depth makes it difficult to isolate the Raman signals of SiC epilayers from those of the substrates such as SiC, sapphire and Si when visible laser lines are used. In this work, confocal micro-Raman was used to characterize 3C, 4H and 6H SiC layers on different substrates with enhanced lateral resolution (approx 0.8 mu m) and depth resultion (approx 2 mu m). Both lateral and depth variation of the free electron concentration and cattering time were measured from n~_ SiC epi layers on N~+ SiC substrates and from H~+ implanted SiC. A defect mode induced by oxidation process was also analyzed as function of the depth and the lateral position.
机译：当使用可见激光线时，大的可见光穿透深度使得难以将SiC外延层的拉曼信号与诸如SiC，蓝宝石和Si之类的衬底的拉曼信号隔离。在这项工作中，共聚焦显微拉曼光谱用于表征不同基板上的3C，4H和6H SiC层，并具有增强的横向分辨率（约0.8微米）和深度结果（约2微米）。从N〜+ SiC衬底上的n〜_ SiC外延层和H〜+注入的SiC测量了自由电子浓度的横向和深度变化以及捕获时间。还分析了由氧化过程引起的缺陷模式与深度和横向位置的关系。

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