Photoreflectance near-field scanning optical microscopy

机译：光反射近场扫描光学显微镜

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A novel Near-field Scanning Optical Microscopy (NSOM) technique is used to btain simultaneous topology, photoluminescence and photoreflectance (PR) spectra. PR spectra from GaAs surfaces were obtained and the local electric fields were calculated. Sub-seavelength resolution is expected for this technique and achieved for PL and topology measurements Photovoltages, resulting from the high intensity o f hight at the NSOM tip, can limit the spatial resolution of the electric field determination.

机译：一种新颖的近场扫描光学显微镜（NSOM）技术用于获得同时的拓扑，光致发光和光反射（PR）光谱。从GaAs表面获得了PR光谱，并计算了局部电场。亚波长分辨率对于该技术是期望的，并且对于PL和拓扑测量而言可以实现。NSOM尖端的高强度产生的光电压会限制电场确定的空间分辨率。

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《Symposium on Optical Microstructural Characterization of Semiconductors held November 29-30, 1999, Boston, Massachusetts, U.S.A.》|1999年|p.13-17|共5页
会议地点 Boston MA(US)
作者
Charles Plaulson; Brian Hamwkins; Jingxi Sun; Arthur B.Ellis; Leon Mccaughan; TFKuech;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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Photoreflectance near-field scanning optical microscopy

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