Nondestructive analysis of current gain of InP/InGaAs heterojuncetion bipolar transistor structurres using photoreflectance spectroscopy

机译：使用光反射光谱法对InP / InGaAs异质结双极晶体管结构的电流增益进行无损分析

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InP/InGaAs heterojunction bipolar transistor (HBT) wafers grown by metal-organic vapor phase epitaxy (MOVPE) have been characterized by photoreflectance (PR) spectroscopy. The intensity of PR signals from the InP emitter and InGaAs collector layers of the HBT wafers decreased with increasing emitter growth temperature and showed a linear positive correlation with the HBT current gain. On the other hand, the intensity of PR signals from the n-InP single layers scarcelyt changed with increasing InP growth temperature. The change in the PR intensity of the emitter and collector layers is expected to reflect the crystal quality of the adjacent InGaAs:C base layer, which determines the HBT current gain. Thus, the present PR method is eminently suitable for the nondestructive analysis of the current gain of InP/InGaAs HBT wafers.

机译：通过金属有机气相外延（MOVPE）生长的InP / InGaAs异质结双极晶体管（HBT）晶片已通过光反射（PR）光谱进行了表征。 HBT晶片的InP发射极和InGaAs集电极层的PR信号强度随着发射极生长温度的升高而降低，并且与HBT电流增益呈线性正相关。另一方面，来自n-InP单层的PR信号的强度几乎不会随着InP生长温度的升高而变化。发射极和集电极层的PR强度的变化有望反映出相邻的InGaAs：C基层的晶体质量，这决定了HBT电流增益。因此，本发明的PR方法非常适合于InP / InGaAs HBT晶片的电流增益的非破坏性分析。

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《Symposium on Optical Microstructural Characterization of Semiconductors held November 29-30, 1999, Boston, Massachusetts, U.S.A.》|1999年|p.257-262|共6页
会议地点 Boston MA(US)
作者
Hiroki Sugiyama; Noriyuki Watanabe; Kazuo watanabe; Takashi Kobayashi; Kazumi wada;
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正文语种 eng
中图分类无线电电子学、电信技术;
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机译：具有高电流增益和低失调电压的InP / InGaAs变质δ掺杂异质结双极晶体管
2. Composite-Collector InGaAs/InP Double Heterostructure Bipolar Transistors with Current-Gain Cutoff Frequency of 242 GHz [J] . Cheng W, Jin Z, Su YB, Chinese physics letters . 2009,第3期

机译：电流增益截止频率为242 GHz的复合集电极InGaAs / InP双异质结构双极晶体管
3. Composite-Collector InGaAs/InP Double Heterostructure Bipolar Transistors with Current-Gain Cutoff Frequency of 242 GHz [J] . CHENG Wei, JIN Zhi, SU Yong-Bo, 中国物理快报：英文版 . 2009,第003期

机译：截止电流为242 GHz的复合集电极InGaAs / InP双异质结构双极晶体管
4. Nondestructive analysis of current gain of InP/InGaAs heterojunction bipolar transistor structures using photoreflectance spectroscopy [C] . Hiroki Sugiyama, Noriyuki Watanabe, Kazuo Watanabe, Symposium on optical microstructural characterization of semiconductors . 2000

机译：使用光反射光谱的INP / InGaAs异质结双极晶体管结构的无损分析
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Polarized photoreflectance and photoluminescence spectroscopy of InGaAs/GaAs quantum rods grown with As2 and As4 sources [O] . Ramūnas Nedzinskas, Bronislovas Čechavičius, Julius Kavaliauskas, 2012

机译：As2和As4源生长的InGaAs / GaAs量子棒的偏振光反射和光致发光光谱
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8. InP/InGaAs Heterojunction Bipolar Transistors Grown on Ge/P Co-implanted InP Substrates by Metal-Organic Molecular Bean Epitaxy. [R] . Sung, W. J., Kopf, R. F., Werder, D. J., 2002

机译：通过金属有机分子豆外延生长在Ge / p共注入Inp衬底上的Inp / InGaas异质结双极晶体管。

Nondestructive analysis of current gain of InP/InGaAs heterojuncetion bipolar transistor structurres using photoreflectance spectroscopy

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