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首页> 外文会议>Symposium on Optical Microstructural Characterization of Semiconductors held November 29-30, 1999, Boston, Massachusetts, U.S.A. >Low temperature photoluminescence and photonduced current spectroscopy on CdZnTe Grown by high-pressure bridgman technique
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Low temperature photoluminescence and photonduced current spectroscopy on CdZnTe Grown by high-pressure bridgman technique

机译：高压布里奇曼技术生长的CdZnTe的低温光致发光和光诱导电流光谱

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摘要

Low tem,perature photoluminescence (PL), photoinduced current spectroscopy (PICTS) and thermoelectric effect spectroscopy (TEES) measurements have been carried out on several CdZnTe smaples, taken from the same ingot, gown by the High Pressure Bridgman Technique. The PL bandgap edge luminescence allowed us to study the quality of the CdZnTe material. We have also determined the zinc segregation through the ingot. A broad luminescence band at lower energies was observed and correlated with PICTS results. The behavior of the defects through the ingot was studied by PICTS. FInally, these results are used to implement the resistivity model.
机译：低温，高温光致发光（PL），光致电流光谱（PICTS）和热电效应光谱（TEES）的测量是在几个CdZnTe枫板上进行的，这些枫是从同一锭锭上制成的，由高压Bridgman技术获得。 PL带隙边缘发光使我们能够研究CdZnTe材料的质量。我们还确定了通过铸锭的锌偏析。在较低能量下观察到宽的发光带，并与PICTS结果相关。 PICTS研究了通过铸锭的缺陷行为。最后，将这些结果用于实现电阻率模型。

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