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首页> 外文会议>Symposium Proceedings vol.808; Symposium on Amorphous and Nanocrystalline Silicon Science and Technology - 2004; 20040413-16; San Francisco,CA(US) >Hole Drift-Mobility Measurements and Multiple-Trapping in Microcrystalline Silicon
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Hole Drift-Mobility Measurements and Multiple-Trapping in Microcrystalline Silicon

机译：微晶硅中的空穴漂移迁移率测量和多重阱

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摘要

We present photocarrier time-of-flight measurements of the hole drift-mobility in macrocrystalline silicon samples with a high crystalline volume fraction; typical room-temperature values are about 1 cm~2/Vs. Temperature-dependent measurements are consistent with the model of multiple-trapping in an exponential bandtail. While this model has often been applied to amorphous silicon, its success for predominantly crystalline samples is unexpected. The valence bandtail width is 31 meV, which is about 10-20 meV smaller than values reported for a-Si:H, and presumably reflects the greater order in the microcrystalline material. The hole band-mobility is about 1 cm~2/Vs - essentially the same magnitude as has been reported for electrons and for holes in amorphous silicon, and suggesting that this magnitude is a basic characteristic of mobility-edges, at least in silicon-based materials. The attempt-frequency v is about 10~9 s~(-1); this value is substantially smaller than the values 10~(11) - 10~(12) s~(-1) typically reported for holes in amorphous silicon, but the physical significance of the parameter remains obscure.
机译：我们提出了具有高晶体体积分数的宏晶硅样品中空穴漂移迁移率的光载流子飞行时间测量；典型的室温值约为1 cm〜2 / Vs。与温度有关的测量与指数带尾中的多重捕获模型一致。尽管此模型通常已应用于非晶硅，但对于主要用于晶体样品的成功却是出乎意料的。价带隙宽度为31 meV，比报道的a-Si：H的值小约10-20 meV，并且大概反映了微晶材料中的较大顺序。空穴带迁移率约为1 cm〜2 / Vs-基本上与电子和非晶硅中空穴的报道幅度相同，这表明该幅度至少是硅中迁移率边缘的基本特征。基础材料。尝试频率v约为10〜9 s〜（-1）;该值实质上小于非晶硅中空穴通常报告的10〜（11）-10〜（12）s〜（-1）的值，但该参数的物理意义仍然不清楚。

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