Charge transfer of n-type GaN photoelectrolysis in HCl solution for H_2 gas generation at a counterelectrode

机译：HCl溶液中n型GaN光电解的电荷转移，用于在反电极产生H_2气体

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In order to clarify the charge transfer characteristics for H_2 generation, photoelectrochemical properties of n-type GaN in HCl solution were investigated. The flatband potential under illumination and the onset voltages of photocurrent located approximately the same position. From the result, we concluded that the positively charged surface by hole capture is the main reason of the extra voltage requirement for H_2 generation. The carrier concentration in n-type GaN also affects the photocurrent.

机译：为了阐明产生H_2的电荷转移特性，研究了HCl溶液中n型GaN的光电化学性质。照明下的平带电势和光电流的起始电压大致位于同一位置。从结果可以得出结论，空穴俘获带正电的表面是产生H_2所需额外电压的主要原因。 n型GaN中的载流子浓度也会影响光电流。

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《Symposium Proceedings vol.885; Symposium on Hydrogen Cycle-Generation, Storage and Fuel Cells; 20051128-1202; Boston,MA(US)》|2005年|P.279-284|共6页
会议地点 BostonMA(US)
作者
Katsushi Fujii; Masato Ono; Takashi Ito; Kazuhiro Ohkawa;
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作者单位

Nakamura Inhomogeneous Crystal Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601, JAPAN;

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原文格式 PDF
正文语种 eng
中图分类化学电源、电池、燃料电池;
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1. Investigation of surface morphology of n-type GaN after photoelectrochemical reaction in various solutions for H_2 gas generation [J] . Katsushi Fujii, Takashi Ito, Masato Ono, Physica Status Solidi. C, Conferences and critical reviews . 2007,第7期

机译：在产生H_2气体的各种溶液中进行光电化学反应后，n型GaN的表面形态研究
2. Charge Transfer across the n-Type GaN-Electrolyte Interface [J] . Susanne Schafer, Amelie H. R. Koch, Alda Cavallini The journal of physical chemistry, C. Nanomaterials and interfaces . 2012,第42期

机译：跨n型GaN电解质界面的电荷转移
3. Investigation on the condensation behavior of the trace element zinc in (Ar/H_2O/HCl/H_2S) gas mixtures and its practical implications in gasification-based processes for energy and power generation [J] . Zhao Xin, Wu Guixuan, Qi Jia, Fuel . 2021,第Jula1期

机译：（Ar / H_2O / HCl / H_2S）气体混合物中微量元素锌的冷凝行为及其在基于气化的能量和发电过程中的实际意义
4. Charge transfer of n-type GaN photoelectrolysis in HCl solution for H_2 gas generation at a counterelectrode [C] . Katsushi Fujii, Masato Ono, Takashi Ito, Symposium on Hydrogen Cycle-Generation, Storage and Fuel Cells . 2006

机译：逆电极HCl溶液HCl溶液中N型GaN光电解的电荷转移
5. Microscopic studies of the fate of charges in organic semiconductors: Scanning Kelvin probe measurements of charge trapping, transport, and electric fields in p- and n-type devices [D] . Smieska, Louisa Marion 2015

机译：微观研究有机半导体中电荷的命运：扫描开尔文探针测量p型和n型器件中的电荷俘获，传输和电场
6. GaN Nanowire Array for Charge Transfer in Hybrid GaN/P3HT:PC [O] . Giorgi Tchutchulashvili, Sergij Chusnutdinow, Wojciech Mech, 2020

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7. Rate Coefficient for H^+ + H_2(X ^1Sigma_g^+, nu=0, J=0) --> H(1s) + H_2^+ Charge Transfer and Some Cosmological Implications [O] . Savin, D W, Krstic, P S, Haiman, Z, 2004

机译：H ^ + + H_2（X ^ 1Sigma_g ^ +，nu = 0，J = 0）的速率系数-> H（1s）+ H_2 ^ +电荷转移和某些宇宙学意义
8. MOCVD Growth and Etching of N-Type GaN Layers on HPVE-Grown Templates and Free-Standing GaN Substrates [R] . Weyher, J. L. 2005

机译：在HpVE生长的模板和自支撑GaN衬底上的N型GaN层的mOCVD生长和蚀刻

Charge transfer of n-type GaN photoelectrolysis in HCl solution for H_2 gas generation at a counterelectrode

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