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首页> 外文会议>Symposium on Progress in Semiconductors Ⅱ―Electronic and Optoelectronic Applications Dec 2-5, 2002 Boston, Massachusetts, U.S.A. >Electrical isolation of p-type GaAsN epitaxial layers by ion irradiation
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Electrical isolation of p-type GaAsN epitaxial layers by ion irradiation

机译：通过离子辐射电隔离p型GaAsN外延层

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摘要

The evolution of sheet resistance (R_s) of p-type conductive GaAs_(1-x)N_x epilayers (x = 0.6%, 1.4%, and 2.3%) exposed to MeV ~1H~+,~7Li~+, ~(12)C~+, and ~(16)O~+ ions and the stability of the formed electrical isolation during post-irradiation annealing were investigated. Results show that the threshold dose (D_(th)) to convert a conductive layer to highly resistive one close-to-linearly depends on original free carrier concentration and inversely depends on the number of irradiation-generated atomic displacements, and is independent of the nitrogen content in GaAsN layers. Increasing beam flux of ~(12)C~+ results in a lower D_(th), whereas ~1H~+ beam flux does not affect it, showing the influence of collision cascade density. Results also show that irrespectively of the ion mass, the stability of electrical isolation formed in GaAsN is dependent on the ratio of the concentration of irradiation-created carrier traps to D_(th). The electrical isolation can be preserved up to 550℃ when the accumulated dose (D) is greater than 3.3 D_(th).
机译：暴露于MeV〜1H〜+，〜7Li〜+，〜（12）的p型导电GaAs_（1-x）N_x外延层（x = 0.6％，1.4％和2.3％）的薄层电阻（R_s）的演变研究了）C〜+和〜（16）O〜+离子以及辐照后退火过程中形成的电隔离的稳定性。结果表明，将导电层近似线性转换为高电阻层的阈值剂量（D_（th））取决于原始自由载流子浓度，反之则取决于辐射产生的原子位移的数量，并且与GaAsN层中的氮含量。 〜（12）C〜+的束通量增加导致较低的D_（th），而〜1H〜+束通量不影响它，从而显示了碰撞级联密度的影响。结果还表明，与离子质量无关，GaAsN中形成的电隔离的稳定性取决于辐射产生的载流子陷阱的浓度与D_（th）的比值。当累积剂量（D）大于3.3 D_（th）时，可保持高达550℃的电隔离。

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