PATTERNED STRUCTURES OF SILICON NANOCRYSTALS PREPARED BY PULSED LASER INTERFERENCE CRYSTALLIZATION OF ULTRA-THIN A-SI:H SINGLE-LAYER

机译：超薄A-SI：H单层脉冲激光干涉结晶制备的硅纳米晶的结构

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We employ the method of phase-modulated KrF excimer pulsed laser interference crystallization to fabricate nanometer-sized crystalline silicon (nc-Si) with the two-dimensional (2D) patterned distribution within the ultra-thin a-Si:H single-layer. The local crystallization occurs after interference laser irradiation under proper energy density. The results of atomic force microscopy, Raman scattering spectroscopy, cross-section transmission electron microscopy and scanning electron microscopy demonstrate that Si nano-crystallites are formed within the initial a-Si:H single-layer, selectively located in the discal regions with the diameter of 350 nm and patterned with the same 2D periodicity of 2.0 μm as the phase-shifting grating. The results show that the present method can be used to fabricate patterned nc-Si films for device applications.

机译：我们采用相位调制KrF准分子脉冲激光干涉结晶的方法来制造在超薄a-Si：H单层内具有二维（2D）图案分布的纳米级晶体硅（nc-Si）。在适当的能量密度下，在干涉激光照射之后，发生局部结晶。原子力显微镜，拉曼散射光谱，横截面透射电子显微镜和扫描电子显微镜的结果表明，硅纳米晶体形成于初始a-Si：H单层内，选择性地位于直径为直径的盘状区域中。波长为350 nm，并以与移相光栅相同的2.0μm二维周期进行构图。结果表明，本方法可用于制造用于器件应用的图案化的nc-Si膜。

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来源
《Symposium on Quantum Confined Semiconductor Nanostructures Dec 2-5, 2002 Boston, Massachusetts, U.S.A.》|2002年|p.419-424|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
Xiaowei Wang; Feng Qiao; Leyi Zhu; Wei Li; Jian Li; Xinfan Huang; Kunji Chen;
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National Laboratory of Solid State Microstructures and Department of Physics Nanjing University, Nanjing 210093, China;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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专利

1. Patterned distribution of silicon nanocrystals prepared by pulsed laser interference crystallization of an ultrathin a-Si : H single layer [J] . Wang XW., Qiao F., Zhu LY., Journal of Physics. Condensed Matter . 2003,第4期

机译：通过超薄a-Si：H单层的脉冲激光干涉结晶制备的硅纳米晶体的图案分布
2. Two-dimensional patterned nanocrystalline Si array prepared by laser interference crystallization of ultra-thin amorphous Si:H single-layer [J] . Xinfan Huang, Xiaowei Wang, Feng Qiao, International journal of nanoscience . 2003,第5a6期

机译：超薄非晶Si：H单层激光干涉结晶制备二维图形化纳米晶Si阵列
3. High-performance polycrystalline silicon thin-film transistors prepared via the laser crystallization of the prepatterned channel layer on the bottom-gate structure [J] . Chao-Lung Wang, I-Che Lee, Chun-Yu Wu, Thin Solid Films . 2013,第FEBa1期

机译：通过底栅结构上预图案化的沟道层的激光晶化制备的高性能多晶硅薄膜晶体管
4. Patterned Structures of Silicon Nanocrystals Prepared by Pulsed Laser Interference Crystallization of Ultra-Thin A-Si:H Single-Layer [C] . Xiaowei Wang, Feng Qiao, Leyi Zhu, Materials Research Society Symposium . 2003

机译：通过超薄A-Si：H单层脉冲激光干涉制备的硅纳米晶体的图案化结构：H单层
5. Pulsed laser annealing of silicon structures for crystallization and dopant activation. [D] . Xu, Li. 2006

机译：硅结构的脉冲激光退火，用于结晶和掺杂剂激活。
6. Tailoring Photoluminescence from Si-Based Nanocrystals Prepared by Pulsed Laser Ablation in He-N2 Gas Mixtures [O] . Anastasiya A. Fronya, Sergey V. Antonenko, Alexander Yu. Kharin, 2020

机译：从He-N2气体混合物中通过脉冲激光烧蚀制备的Si基纳米晶体调整光致发光
7. Influence of Laser Light on the Formation and Properties of Silicon Nanocrystals in a-Si/Sn Layered Structures [O] . V. B. Neimash, A. S. Nikolenko, V. V. Strelchuk, 2019

机译：激光对A-Si / Sn分层结构中硅纳米晶体形成与性能的影响

PATTERNED STRUCTURES OF SILICON NANOCRYSTALS PREPARED BY PULSED LASER INTERFERENCE CRYSTALLIZATION OF ULTRA-THIN A-SI:H SINGLE-LAYER

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