• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Symposium on Quantum Confined Semiconductor Nanostructures Dec 2-5, 2002 Boston, Massachusetts, U.S.A. >OCCURRENCE OF 'ACCIDENTAL' InN QUANTUM DOTS IN INDIUM GALLIUM NITRIDE/GALLIUM NITRIDE HETEROSTRUCTURES
【24h】

OCCURRENCE OF 'ACCIDENTAL' InN QUANTUM DOTS IN INDIUM GALLIUM NITRIDE/GALLIUM NITRIDE HETEROSTRUCTURES

机译：氮化铟镓/氮化镓异质结构中“偶然” Inn量子点的出现

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Nakamura and co-workers were first to report the observation of spontaneously formed In-rich clusters in InGaN quantum wells (QW), using transmission electron microscopy (TEM). Some of the present authors have argued that the exceptional optical efficiency of nitride devices is due to the presence of nearly pure InN QD which form accidentally during crystal growth. Pure InN QD with very small radius would emit light in the required spectral region, under the opposing effects of intrinsic electric fields and quantum confinement, We have recently used extended X-ray absorption fine stucture to examine nanostructure of molecular beam epitaxial (MBE) quantum boxes (QB), and photoluminescence excitation spectroscopy to examine their optical properties, As revealed by AFM, QB are densely packed mesoscopic structures, 10-40 nm wide and 2-3 nm high. Our analysis of the QB EXAFS shows that the filling factor is of order 1%: each QB therefore contains a single QD. The optical evidence suggests that InN dots may be cubic. In contrast, TEM shows that QD in thick epilayers are sparsely distributed. We re-examine recent TEM data on QW in the light of these results.
机译：Nakamura和他的同事们首先使用透射电子显微镜（TEM）报告了在InGaN量子阱（QW）中自发形成的富In团簇的观察结果。本研究的一些作者认为，氮化物器件的出色光学效率是由于存在几乎纯的InN QD所致，该晶体在晶体生长过程中偶然形成。在固有电场和量子约束的相反作用下，具有非常小的半径的纯InN QD会在所需的光谱区域内发光。我们最近使用扩展的X射线吸收精细结构来检查分子束外延（MBE）量子的纳米结构盒（QB）和光致发光激发光谱法检查它们的光学特性。正如原子力显微镜（AFM）所揭示的，QB是密集堆积的介观结构，宽10-40 nm，高2-3 nm。我们对QB EXAFS的分析表明，填充因子约为1％：因此每个QB都包含一个QD。光学证据表明InN点可能是立方的。相反，TEM显示厚外延层中的QD稀疏分布。根据这些结果，我们将重新检查有关QW的最新TEM数据。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号