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首页> 外文会议>Symposium on Radiation Effects and Ion-Beam Processing of Materials; 20031201-20031205; Boston,MA; US >Electrical Properties of Rutile Single Crystal Irradiated by High-Fluence-Reactor-Neutron
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Electrical Properties of Rutile Single Crystal Irradiated by High-Fluence-Reactor-Neutron

机译：高能反应器中子辐照金红石单晶的电学性能

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摘要

Electrical properties of rutile (TiO_2) single crystals irradiated by high-fluence-reactor neutrons have been investigated for the first time. In this paper, the colorless rutile single crystal turns into dark blue after being irradiated by high-fluence-reactor neutrons of 10~(19)/cm~2 and its electrical properties change, from high insulator to normal semiconductor. The relationship of sample resistance to temperature (at low temperature, room temperature and high temperature, respectively) and the effect of annealing atmosphere ( in air or in vacuum) on the electrical property of the sample have been studied. The results show that the sample has semiconductor properties at low temperature. At high temperature, however, it is oxidized into colorless insulator in air and the activation energy gradual changes due to slow oxidization process. In 10~(-4) Pa vacuum condition, TiO_2 becomes a semiconductor due to the presence of ion defects. The electrical conductance mechanism is also discussed.
机译：高通量反应堆中子辐照的金红石（TiO_2）单晶的电学性质是首次研究。本文将无色金红石型单晶在高通量反应堆中子辐照10〜（19）/ cm〜2的中子后变成深蓝色，其电学性质由高绝缘体转变为普通半导体。研究了样品电阻与温度（分别在低温，室温和高温下）的关系以及退火气氛（在空气或真空中）对样品电性能的影响。结果表明该样品在低温下具有半导体性能。然而，在高温下，它在空气中被氧化成无色绝缘体，并且由于缓慢的氧化过程，活化能逐渐变化。在10〜（-4）Pa真空条件下，由于离子缺陷的存在，TiO_2成为半导体。还讨论了电导机制。

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