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首页> 外文会议>Symposium on Spatially Resolved Characterization of Local Phenomena in Materials and Nanostructures Dec 2-6, 2002 Boston, Massachusetts, U.S.A. >Kelvin Probe Microscopy and Cathodoluminescence Microanalysis of the Irradiation Induced Modification of Insulating Materials
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Kelvin Probe Microscopy and Cathodoluminescence Microanalysis of the Irradiation Induced Modification of Insulating Materials

机译：开尔文探针显微镜和阴极发光显微分析辐照诱导的绝缘材料改性

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摘要

A combination of Kelvin Probe Microscopy (KPM) and Cathodoluminescence (CL) microanalysis has been used to characterize ultra pure silicon dioxide (SiO_2) exposed to electron irradiation in a Scanning Electron Microscope. Charged beam irradiation of poorly conducting materials results in the trapping of charge at pre-existing or irradiation induced defects thereby inducing a localized electric field within the irradiated micro-volume of specimen. The residual surface potentials associated with the localized electric field have been mapped using KPM. Evidence of electro-diffusion and defect micro-segregation in charged beam irradiated SiO_2 is observed. The associated mobile defect species are identified using CL microanalysis techniques. The high correlation between KPM and CL images confirms the significant influence of localized potentials on the microstructure of technologically important SiO_2.
机译：开尔文探针显微镜（KPM）和阴极发光（CL）显微分析的结合已用于表征在扫描电子显微镜中暴露于电子辐照的超纯二氧化硅（SiO_2）。导电性差的材料的带电束辐照会导致电荷在预先存在的缺陷或辐照引起的缺陷处被捕获，从而在被辐照的微量样品中引起局部电场。已使用KPM绘制了与局部电场相关的剩余表面电势。观察到在带电束辐照的SiO_2中存在电扩散和缺陷微偏析的迹象。使用CL微分析技术识别相关的移动缺陷种类。 KPM和CL图像之间的高度相关性证实了局部电位对技术上重要的SiO_2的微观结构的重大影响。

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