Observation of ordering and phase separation in In_xGa_(1-x)N layers

机译：In_xGa_（1-x）N层中有序和相分离的观察

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A series of InGaN layers grown by metalorganic vapour deposition and molecular beam epitaxy have been investigated by transmission electron microscopy (TEM). It is shown that for In concentrations lower than 15

机译：通过透射电子显微镜（TEM）研究了通过金属有机气相沉积和分子束外延生长的一系列InGaN层。结果表明对于In浓度低于15

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《Symposiuml on Nitrides and Related Wide Band Gap Materials of the E-MRS 1998 Spring Conference, Strasbourg, France,16-19 June 1998》|1998年|p.186-190|共5页
会议地点 Strasbourg(FR)
作者
P.Ruterana; F.Deniel;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
Epitaxial growth; Gallium nitrides; InGaN; Ordering; Phase separation; Transmission electron microscopy;

机译：外延生长；氮化镓；氮化镓;订购；相分离；透射电子显微镜;

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2. High-resolution X-ray diffraction analysis of Al_xGa_(1-x)N/In_xGa_(1-x)N/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations [J] . Sanjay Kumar Jana, Partha Mukhopadhyay, Saptarsi Ghosh, Journal of Applied Physics . 2014,第17pta1期

机译：蓝宝石多层结构上的Al_xGa_（1-x）N / In_xGa_（1-x）N / GaN的高分辨率X射线衍射分析：理论，模拟和实验观察
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4. Observation of ordering and phase separation in In_xGa_(1-x)N layers [C] . P.Ruterana, F.Deniel, European Materials Research Society Symposium L on nitrides and related wide band gap materials of the E-MRS conference . 1999

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Observation of ordering and phase separation in In_xGa_(1-x)N layers

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