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Sensor properties of Pt doped SnO_2 thin films for detecting CO

机译:掺Pt的SnO_2薄膜对CO的传感性能

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Polycristalline Pt-doped SnO_2 thin films have been integrated to silicon substrate by ultrasonic spray deposition. This deposition technique differs from the usual SnO_2 deposition methods by using a liquid source. It allows one to obtain a very fine and homogeneous dispersion of Pt aggregates which act as a catalyst for the low temperature CO detection (25-100 deg C) by conductance change. The influence of synthesis temperature (460-560 deg C), concentration of Pt additive (0.1-5 at.
机译:通过超声喷涂沉积,将多晶体掺杂Pt的SnO_2薄膜集成到硅衬底上。该沉积技术通过使用液体源与通常的SnO_2沉积方法不同。它可以使Pt聚集体获得非常精细且均匀的分散体,这些Pt聚集体可通过电导变化充当低温CO检测(25-100℃)的催化剂。合成温度(460-560摄氏度),Pt添加剂浓度(0.1-5 at。

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