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Stability of the dielectric properties of PECVD deposited carbon-doped SiOF films

机译：PECVD沉积的碳掺杂SiOF薄膜介电性能的稳定性

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Carbon-doped SiO_2:F films were deposited by adding CH_4 gas to SiH_4/O_2/CF_4 gas mixtures using a plasma-enhanced chemical vapor deposition method. As CH_4 is added increasingly, the dielectric constants, #epsilon#_s after air exposure for 1 week, indicating a significant improvement in the water resistivity of the films. It is proposed that the improved water resistivity is correlated with a decrease in the peak frequency of the Si-O stretching absorption and with formation of Si-CH_3 bonds in SiO_2:F:C films, along with an increase in the film density. These dielectric and vibrational properties were analyzed in terms of a difference in the electronegativity of the constituent atoms. direct c 1999 Published by Elsevier Science S.A. All rights reserved.
机译：通过使用等离子增强化学气相沉积法将CH_4气体添加到SiH_4 / O_2 / CF_4气体混合物中来沉积碳掺杂的SiO_2：F膜。随着CH_4的添加量增加，空气暴露1周后的介电常数εs表示膜的耐水性显着提高。提出改善的水电阻率与Si-O拉伸吸收的峰值频率的降低以及在SiO_2：F：C膜中形成Si-CH_3键以及膜密度的增加有关。根据构成原子的电负性差异分析了这些介电和振动特性。直接c 1999由Elsevier Science S.A.出版，保留所有权利。

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