• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Thin films epitaxial growth and nanostructures >Optical on wafer measurement of Ge content of virtual SiGe-substrates
【24h】

Optical on wafer measurement of Ge content of virtual SiGe-substrates

机译：晶圆上光学测量虚拟SiGe基板的Ge含量

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We developed a procedure for a fast and non-destructive determination of the Ge-content in virtual Si_(1-x)Ge_x-substrates in the range from x=0.2-1. The virtual substrates were grown in our MBE-system. The reflectivity of SiGe substrates depends on the Ge content x and on the crosshatch surface corrugations. The extremes in relative reflectance values are rather insensitive to surface corrugations contrary to the absolute values which depend significantly on the surface morphology. The reflectance of films was measured ex situ with a commercial measuring system (NanoSpec). This system measures relatively to a measurement standard wafer (Silicon-wafer) over wavelength range from 370 to 800 nm. The reflection graphs have maxima in the range from 410 to 590 nm depending on the Ge-content. Results obtained by these measurements with the nanoSpec measuring system were in a good agreement with SIMS-analysis and XRD data.
机译：我们开发了一种快速，无损确定虚拟Si_（1-x）Ge_x衬底中x = 0.2-1范围内Ge含量的程序。虚拟底物在我们的MBE系统中生长。 SiGe基板的反射率取决于Ge含量x和交叉影线表面波纹。与绝对值相反，相对反射率值的极值对表面波纹相当不敏感，而绝对值明显取决于表面形态。膜的反射率是使用商业测量系统（NanoSpec）进行非原位测量的。该系统相对于370至800 nm波长范围内的测量标准晶圆（硅晶圆）进行相对测量。取决于Ge含量，反射图具有在410至590nm范围内的最大值。使用nanoSpec测量系统进行这些测量获得的结果与SIMS分析和XRD数据非常吻合。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号