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Magnetoluminescence measurements of two-dimensional hole gas

机译:二维空穴气的磁致发光测量

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The radiative recombination in the p-type Al_(0.5)As/GaAs heterostructure interface, so called H-band, was investigated using photo-luminescence (PL) and photoluminescence excitation (PLE) spectroscopy. The enhancement of the H-band intensity with excitation at the free exciton energy was observed. Magnetoluminescence measurements, both in Faraday and Voigt configurations, were also performed. Non-excitonic behaviour of investigated line in fields B>3 T and excitonic in lower fields was observed.
机译:使用光致发光(PL)和光致发光激发(PLE)光谱研究了p型Al_(0.5)As / GaAs异质结构界面中的辐射复合,即所谓的H带。观察到在自由激子能量激发下H波段强度的增强。还进行了法拉第和Voigt构型的磁致发光测量。在B> 3 T场中观察到的谱线具有非激子行为,在下部场中观察到了激子行为。

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