7.5 kV 4H-SiC GTO's for power conversion

机译：7.5 kV 4H-SiC GTO用于功率转换

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There is a growing demand for medium voltage, 6.5 – 24 kV, switches capable of operating at more than 15 kHz frequencies. The range of potential applications includes grid-tied solar inverters and pulsed-power applications, where the conventional silicon thyristor technology is plagued with slow switching speeds at medium blocking voltage requirements. In this paper we present the design and characterization of 7.5 kV 4H-SiC Gate-Turn-Off thyristors (GTO's) with multiple floating guard-ring edge termination, and present GTO switching performance at 10 kHz in an AC-link™ [1] inverter.

机译：能够以超过15 kHz的频率工作的中压开关6.5 – 24 kV的需求在不断增长。潜在的应用范围包括并网型太阳能逆变器和脉冲功率应用，在这些应用中，常规的硅晶闸管技术因在中等阻断电压要求下开关速度慢而困扰。在本文中，我们介绍了具有多个浮动保护环边缘终端的7.5 kV 4H-SiC栅极关断晶闸管（GTO）的设计和特性，并在AC-link™[1]中介绍了10 kHz时的GTO开关性能。逆变器。

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《Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition》|2013年|222-225|共4页
会议地点 Long Beach CA(US);Long Beach CA(US)
作者
Fursin Leonid; Hostetler John; Li Xueqing; Fox Matthew;
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United Silicon Carbide, Inc., 7 Deer Park Drive, Suite E, Monmouth Junction, NJ 08852, USAc;

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正文语种 eng
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机译：高性能1.2 kV，3.3 kV和5.0 kV 4H-SiC功率SBD的制造和表征
3. Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor [J] . S. Ryu, D. Lichtenwalner, E. Van Brunt, Materials science forum . 2017,第期

机译：高温氧化延长载流子寿命对15 kV 4H-SiC P-GTO晶闸管的影响
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7.5 kV 4H-SiC GTO's for power conversion

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