Investigation of InAs quantum dashes for 1.45 - 2.1 μm VECSEL active regions.

著录项

• 来源
  《Vertical external cavity surface emitting lasers (VECSELs) III》|2013年|86060D.1-86060D.12|共12页
• 会议地点 San Francisco CA(US)
• 作者

  T.J. Rotter; P. Ahirwar; D.M. Shima; S. J. Addamane; C. P. Hains; L. R. Dawson; G.Balakrishnan;

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• 作者单位

  Center for High Technology Materials, The University of New Mexico, Albuquerque, NM;

  Center for High Technology Materials, The University of New Mexico, Albuquerque, NM;

  Center for High Technology Materials, The University of New Mexico, Albuquerque, NM;

  Center for High Technology Materials, The University of New Mexico, Albuquerque, NM;

  Center for High Technology Materials, The University of New Mexico, Albuquerque, NM;

  Center for High Technology Materials, The University of New Mexico, Albuquerque, NM;

  Center for High Technology Materials, The University of New Mexico, Albuquerque, NM;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Semiconductor lasers; Quantum dash lasers; Surface-emitting lasers;

  机译：半导体激光器；量子破折号激光器；表面发射激光器;