• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Wide bandgap semiconductor materials and devices 12 >Advanced residual stress analysis on the heteroepitaxial growth of 3C-SiC/Si for MEMS application
【24h】

Advanced residual stress analysis on the heteroepitaxial growth of 3C-SiC/Si for MEMS application

机译：MEMS应用中3C-SiC / Si异质外延生长的高级残余应力分析

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In this article, helped by finite element simulations, we show that, properly designed, planar-rotator microstructures can be used to simultaneously determine the uniform and gradient residual stresses in thin films in the limit of linear residual stress form. TEM characterization studies on the defect formation and propagation as a function of 3C-SiC/Si thickness revealed that the linear stress approximation in such a hetero-epitaxial thin film is wrong. With finite element modeling four different stress relationships were studied and compared. This study shows that the new approximation forms of the total residual stress function result in a better fit of the experimental data and reduces the disagreement between theory and experiments.
机译：在本文中，借助有限元模拟，我们表明，经过适当设计的平面转子微结构可用于在线性残余应力形式的限制下同时确定薄膜中的均匀残余应力和梯度残余应力。 TEM表征研究了缺陷形成和扩展与3C-SiC / Si厚度的关系，发现这种异质外延薄膜中的线性应力近似是错误的。通过有限元建模，研究并比较了四种不同的应力关系。这项研究表明，总残余应力函数的新近似形式可以更好地拟合实验数据，并减少了理论与实验之间的分歧。

著录项

  • 来源
  • 会议地点 Montreal(CA);Montreal(CA)
  • 作者

    R. Anzalone; M. Camarda; G. Darrigo; N. Piluso; A. Severino; A. Canino; A. La Magna; F. La Via;

  • 作者单位

    Consiglio Nazionale delle Ricerche, Istituto di Microelettronica e Microsistemi CNR-IMM, Z.I. VIII Strada 5 195121 Catania, Italy;

    Consiglio Nazionale delle Ricerche, Istituto di Microelettronica e Microsistemi CNR-IMM, Z.I. VIII Strada 5 195121 Catania, Italy;

    Consiglio Nazionale delle Ricerche, Istituto di Microelettronica e Microsistemi CNR-IMM, Z.I. VIII Strada 5 195121 Catania, Italy;

    Consiglio Nazionale delle Ricerche, Istituto di Microelettronica e Microsistemi CNR-IMM, Z.I. VIII Strada 5 195121 Catania, Italy;

    Consiglio Nazionale delle Ricerche, Istituto di Microelettronica e Microsistemi CNR-IMM, Z.I. VIII Strada 5 195121 Catania, Italy;

    Consiglio Nazionale delle Ricerche, Istituto di Microelettronica e Microsistemi CNR-IMM, Z.I. VIII Strada 5 195121 Catania, Italy;

    Consiglio Nazionale delle Ricerche, Istituto di Microelettronica e Microsistemi CNR-IMM, Z.I. VIII Strada 5 195121 Catania, Italy;

    Consiglio Nazionale delle Ricerche, Istituto di Microelettronica e Microsistemi CNR-IMM, Z.I. VIII Strada 5 195121 Catania, Italy;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 材料;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号