High-temperature stable titanium carbide ohmic and schottky contacts to SiC

机译：SiC的高温稳定碳化钛欧姆和肖特基接触

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Epitaxial titanium carbide is investigated as a low resistivity, high temperature stable Ohmic and Schottky contact to 4H and 6H SiC. The titanium carbide films were deposited at 500 deg using co-evaporation of titanium (e-beam) and C_(60) (Knudsen cell) in a UHV system. Schottky diodes and TLM structures were fabricated on low and high doped SiC material respectively. The samples were annealed at 700 deg in a vacuum furnace, and electricla measurements were performed up to 300 deg.

机译：研究了外延碳化钛作为与4H和6H SiC的低电阻率，高温稳定的欧姆和肖特基接触。使用UHV系统中的钛（电子束）和C_（60）（Knudsen电池）共同蒸发，在500度下沉积碳化钛膜。肖特基二极管和TLM结构分别在低掺杂和高掺杂SiC材料上制造。将样品在真空炉中在700度下退火，并在300度以下进行电测量。

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《Wide-Bandgap semiconductors for high power, high frequency and high temperature》|1998年|p.125-130|共6页
会议地点 San Francisco CA(US)
作者
C.M.Zetterling; M.Ostling; L.Norin; U.Jansson;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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专利

1. CVD-Based Tungsten Carbide Schottky Contacts to 6H-SiC for Very High-Temperature Operation [J] . NILS LUNDBERG, MIKAEL OSTLING, CARL-MIKAEL ZETTERLING Journal of Electronic Materials . 2000,第3期

机译：基于CVD的碳化钨肖特基触头与6H-SiC的高温操作
2. Effects of nickel and titanium thickness on nickel/titanium ohmic contacts to n-type silicon carbide [J] . Jae Hyun Park, Paul H. Holloway Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2005,第2期

机译：镍和钛的厚度对n型碳化硅的镍/钛欧姆接触的影响
3. CF_4:O_2 surface etching for the improvement of contact resistance and high-temperature reliability in Ni/Nb ohmic contacts on n-type 4H-SiC [J] . Van Cuong Vuong, Miyazaki Takamichi, Ishikawa Seiji, Japanese journal of applied physics . 2020,第5期

机译：CF_4：O_2表面蚀刻N-Type 4H-SiC上的Ni / Nb欧姆接触中的接触电阻和高温可靠性的表面蚀刻
4. High-temperature stable titanium carbide ohmic and schottky contacts to SiC [C] . C.M.Zetterling, M.Ostling, L.Norin, Symposium on wide-Bandgap semiconductors for high power, high frequency and high temperature . 1998

机译：高温稳定的碳化钛欧姆和肖特基触点到SIC
5. Schottky and ohmic contacts to silicon carbide with device applications. [D] . Luckowski, Eric David. 1998

机译：肖特基和欧姆接触碳化硅的器件应用。
6. Schottky junction/ohmic contact behavior of a nanoporous TiO2 thin film photoanode in contact with redox electrolyte solutions [O] . Masao Kaneko, Hirohito Ueno, Junichi Nemoto 2015

机译：纳米多孔TiO2薄膜光阳极与氧化还原电解质溶液接触的肖特基结/欧姆接触行为
7. On the Schottky barrier height lowering effect of Ti3SiC2 in ohmic contacts to p-type 4H-SiC [O] . Fisher Craig A., Pérez-Tomás Amador 2015

机译：Ti3SiC2在p型4H-SiC欧姆接触中的肖特基势垒高度降低效应
8. Thermally Stable Ohmic Contacts on Silicon Carbide Developed for High-Temperature Sensors and Electronics [R] . Okojie, R. S. 2001

机译：碳化硅上的热稳定欧姆接触开发用于高温传感器和电子设备

High-temperature stable titanium carbide ohmic and schottky contacts to SiC

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