High-energy implantation of boron in 4H-SiC

机译：在4H-SiC中高能注入硼

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The high energy implantation of boron into n-type Silicon Carbide epitaxial layers of the polytype 4H was investigated for various sample temperatures during implantation and different doping concentrations. Depth profiling using secondary ion mass spectrometry was applied to determine the boron distribution in the as-implanted epilayers and the re-distribution of boron atoms during a half hour heat treatment at a temperature of 1700 deg. The SIMS boron profiles are compared to numerical Monte Carlo calculations using the program TRIM96 and to electrical profiling by scanning capacitance microscopy.

机译：研究了硼在高能注入多晶型4H的n型碳化硅外延层中的注入过程中的各种样品温度和不同的掺杂浓度。应用二次离子质谱法进行深度分析，以确定在1700摄氏度温度下半小时热处理过程中注入的外延层中硼的分布以及硼原子的重新分布。使用TRIM96程序将SIMS硼轮廓与数值蒙特卡洛计算进行比较，并通过扫描电容显微镜将其与电分析进行比较。

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《Wide-Bandgap semiconductors for high power, high frequency and high temperature》|1998年|p.469-474|共6页
会议地点 San Francisco CA(US)
作者
Adolf Shoner; Stefan Karisson; Thomas Schmitt; Anders Hallen; Manfred Frischholz; Kurt Rottner;
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正文语种 eng
中图分类无线电电子学、电信技术;
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专利

1. Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films [J] . Ivanov P. A., Kudoyarov M. F., Kozlovski M. A., Semiconductors . 2016,第7期

机译：通过将高能（53 MeV）氩离子注入n型外延膜中形成的半绝缘4H-SiC层
2. Characterization of defects in n-type 4H-SiC after high-energy N ion implantation by RBS-channeling and Raman spectroscopy [J] . Venkata C. Kummari, Tilo Reinert, Weilin Jiang, Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms . 2014,第auga1期

机译：通过RBS通道和拉曼光谱表征高能N离子注入后n型4H-SiC中的缺陷
3. DLTS Measurements on 4H-SiC JBS-diodes with Boron Implanted Local p-n Junctions [J] . Pavel lvanov, Oleg Korolkov, Tatyna Samsonova, Materials science forum . 2011,第期

机译：硼注入局部p-n结的4H-SiC JBS二极管的DLTS测量
4. High-energy implantation of boron in 4H-SiC [C] . Adolf Shoner, Stefan Karisson, Thomas Schmitt, Symposium on wide-Bandgap semiconductors for high power, high frequency and high temperature . 1998

机译：4H-SIC硼的高能植入
5. Epitaxy of boron phosphide on AlN, 4H-SiC, 3C-SiC and ZrB2 substrates. [D] . Padavala, Balabalaji. 2016

机译：AlN，4H-SiC，3C-SiC和ZrB2衬底上磷化硼的外延。
6. Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings [O] . Monia Spera, Giuseppe Greco, Domenico Corso, 2019

机译：在不同的注入后退火后p型铝注入的4H-SiC层上的欧姆接触
7. High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes [O] . Kimoto Tsunenobu, Miyamoto Nao, Schoner Adolf, 2002

机译：向4H-SiC中注入高能（MeV）Al和B离子并制造Pin二极管
8. Boron-enhanced diffusion of boron from ultralow-energy boron implantation [R] . Agarwal, A. , Eaglesham, D. J. , Gossmann, H. J. , 1998

机译：从超低能量硼注入中硼增强硼的扩散

High-energy implantation of boron in 4H-SiC

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